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Vertically aligned ZnO nanorod array/CuO heterojunction for UV detector application

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10.1002/pssa.201431221
 
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Cita com:
hdl:2117/25061

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Vikas, L. S.
Sanal, K. C.
Jayaraj, M. K.
Antony, Aldrin
Puigdollers i González, JoaquimMés informacióMés informacióMés informació
Document typeArticle
Defense date2014-11-01
Rights accessRestricted access - publisher's policy
Attribution-NonCommercial-NoDerivs 3.0 Spain
Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain
Abstract
Vertically aligned ZnO nanorod array (ZNA) was deposited by electrodeposition technique over glass substrate coated with Al doped ZnO (AZO). The photo-luminescence spectrum of the ZNA showed a near band edge emission and deep level emission (DLE). The resolved DLE spectrum indicates the formation of various defect levels within the band gap of ZnO. P-type CuO was deposited on ZNA to form ZNA/CuO heterojunction. The voltage-current (V-I) characteristics show a turn on voltage of 0.65V. The device showed good rectification behavior and a rectification ratio of 50 at 1V. The heterojunction with a device structure AZO/ZNA/CuO/Au showed good response on ultra violet (UV) illumination. The device has stability even after long exposures to atmospheric conditions and UV light.
CitationVikas, L. [et al.]. Vertically aligned ZnO nanorod array/CuO heterojunction for UV detector application. "Physica status solidi A. Applications and materials science (Print edition)", 01 Novembre 2014, vol. 211, núm. 11, p. 2493-2498. 
URIhttp://hdl.handle.net/2117/25061
DOI10.1002/pssa.201431221
ISSN1862-6300
Publisher versionhttp://onlinelibrary.wiley.com/doi/10.1002/pssa.201431221/pdf
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  • MNT - Grup de Recerca en Micro i Nanotecnologies - Articles de revista [346]
  • Departament d'Enginyeria Electrònica - Articles de revista [1.664]
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