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dc.contributor.authorPouyan, Peyman
dc.contributor.authorAmat Bertran, Esteve
dc.contributor.authorBarajas Ojeda, Enrique
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-11-19T16:56:01Z
dc.date.available2015-02-25T15:12:27Z
dc.date.created2014
dc.date.issued2014
dc.identifier.citationPouyan, P. [et al.]. Impact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches. A: International Symposium on Quality Electronic Design. "Proceedings - International Symposium on Quality Electronic Design". Santa Clara: 2014, p. 32-38.
dc.identifier.isbn978-147993946-6
dc.identifier.urihttp://hdl.handle.net/2117/24778
dc.description.abstractThis work presents a test and measurement technique to monitor aging and process variation status of SRAM cells as an aging-aware design technique. We have then verified our technique with an implemented chip. The obtained aging information are utilized to guide our proactive strategies, and to track the impact of aging in new reconfiguration techniques for cache memory structures. Our proactive techniques improve the reliability, extend the SRAMs lifetime, and reduce the Vmin drift in presence of process variation and BTI aging.
dc.format.extent7 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.otherBTI
dc.subject.otherProcess Variation
dc.subject.otherReconfiguration
dc.subject.otherSRAM
dc.subject.otherVmin
dc.titleImpact of adaptive proactive reconfiguration technique on Vmin and lifetime of SRAM caches
dc.typeConference report
dc.subject.lemacMemòries digitals
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1109/ISQED.2014.6783303
dc.rights.accessOpen Access
local.identifier.drac14899538
dc.description.versionPostprint (author’s final draft)
local.citation.authorPouyan, P.; Amat, E.; Barajas, E.; Rubio, A.
local.citation.contributorInternational Symposium on Quality Electronic Design
local.citation.pubplaceSanta Clara
local.citation.publicationNameProceedings - International Symposium on Quality Electronic Design
local.citation.startingPage32
local.citation.endingPage38


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