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Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts
dc.contributor.author | Carrió Díaz, David |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | López Rodríguez, Gema |
dc.contributor.author | López González, Juan Miguel |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2014-11-10T15:04:07Z |
dc.date.created | 2014-09 |
dc.date.issued | 2014-09 |
dc.identifier.citation | Carrió, D. [et al.]. Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts. "Energy procedia", Setembre 2014, vol. 55, p. 47-52. |
dc.identifier.issn | 1876-6102 |
dc.identifier.uri | http://hdl.handle.net/2117/24648 |
dc.description.abstract | In this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped regions are defined in a point-like structure instead of the more classical arrangement of fully doped fingers. Numerical simulations allow us to optimize rear contact geometry, i.e. optimum pitch between contacts, depending on the substrate resistivity and the passivation quality of base contacts. Results show a trade-off between recombination and base resistive losses demonstrating limit efficiencies over 27% for a perfectly passivated structure on p- and n-type substrates. More realistic devices where state-of-the-art surface passivation is considered reach efficiencies beyond 22% on 2 +- 1 ohmcm substrates with optimum pitch values of 200 +- 50 µm. |
dc.format.extent | 6 p. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria de la telecomunicació::Processament del senyal::Processament de la imatge i del senyal vídeo |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Three-dimensional imaging |
dc.subject.other | IBC solar cell |
dc.subject.other | C-Si |
dc.subject.other | Point-like contacts |
dc.subject.other | 3D simulation |
dc.subject.other | Electrical shading |
dc.subject.other | Laser doping |
dc.title | Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts |
dc.type | Article |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Imatges tridimensionals |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1016/j.egypro.2014.08.048 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S1876610214012727 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 15184571 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Carrió, D.; Ortega, P.; Martin, I.; Lopez, G.; Lopez-Gonzalez, Juan M.; Orpella, A.; Voz, C.; Alcubilla, R. |
local.citation.publicationName | Energy procedia |
local.citation.volume | 55 |
local.citation.startingPage | 47 |
local.citation.endingPage | 52 |
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