Mostra el registre d'ítem simple

dc.contributor.authorCarrió Díaz, David
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorMartín García, Isidro
dc.contributor.authorLópez Rodríguez, Gema
dc.contributor.authorLópez González, Juan Miguel
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-11-10T15:04:07Z
dc.date.created2014-09
dc.date.issued2014-09
dc.identifier.citationCarrió, D. [et al.]. Rear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts. "Energy procedia", Setembre 2014, vol. 55, p. 47-52.
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/2117/24648
dc.description.abstractIn this work 3D simulations are used to study the impact of technological parameters on device performance of c-Si interdigitated back-contacted IBC solar cells with point-like doped contacts. In these cells, the highly-doped regions are defined in a point-like structure instead of the more classical arrangement of fully doped fingers. Numerical simulations allow us to optimize rear contact geometry, i.e. optimum pitch between contacts, depending on the substrate resistivity and the passivation quality of base contacts. Results show a trade-off between recombination and base resistive losses demonstrating limit efficiencies over 27% for a perfectly passivated structure on p- and n-type substrates. More realistic devices where state-of-the-art surface passivation is considered reach efficiencies beyond 22% on 2 +- 1 ohmcm substrates with optimum pitch values of 200 +- 50 µm.
dc.format.extent6 p.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Processament del senyal::Processament de la imatge i del senyal vídeo
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica
dc.subject.lcshSolar cells
dc.subject.lcshThree-dimensional imaging
dc.subject.otherIBC solar cell
dc.subject.otherC-Si
dc.subject.otherPoint-like contacts
dc.subject.other3D simulation
dc.subject.otherElectrical shading
dc.subject.otherLaser doping
dc.titleRear contact pattern optimization based on 3D simulations for IBC solar cells with point-like doped contacts
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.subject.lemacImatges tridimensionals
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.egypro.2014.08.048
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S1876610214012727
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac15184571
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorCarrió, D.; Ortega, P.; Martin, I.; Lopez, G.; Lopez-Gonzalez, Juan M.; Orpella, A.; Voz, C.; Alcubilla, R.
local.citation.publicationNameEnergy procedia
local.citation.volume55
local.citation.startingPage47
local.citation.endingPage52


Fitxers d'aquest items

Imatge en miniatura

Aquest ítem apareix a les col·leccions següents

Mostra el registre d'ítem simple