Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet
PublisherAmerican Institute of Physics
Rights accessRestricted access - publisher's policy
Thin film transistors based on polyarylamine poly?N,N?-diphenyl-N,N ?bis?4-hexylphenyl?- ?1,1?biphenyl?-4,4?-diamine ?pTPD? were fabricated using spin coating in order to measure the mobility of pTPD upon oxidation. Partially oxidized pTPD with a molecular magnetic cluster showed an increase in mobility of over two orders of magnitude. A transition in the mobility of pTPD upon doping could also be observed by the presence of a maximum obtained for a given oxidant ratio and subsequent decrease for a higher ratio. Such result agrees well with a previously reported model based on the combined effect of dipolar broadening of the density of states and transport manifold filling.
CitationCheylan, S.; Puigdollers, J.; Bolink, H.J.; Coronado, E.; Voz, C.; Alcubilla, R.; Badenes, G. Increased conductivity of a hole transport layer due to oxidation by a molecular nanomagnet. A: Journal of Applied Physics, 2005, vol. 103, 096110.