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Macroporous silicon for high-capacitance devices using metal electrodes

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10.1186/1556-276X-9-473
 
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hdl:2117/24556

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Vega Bru, DidacMés informació
Reina Marsinyach, Jordi
Martin, Ferran
Pavón Urbano, Ramón
Rodríguez Martínez, ÁngelMés informacióMés informacióMés informació
Document typeArticle
Defense date2014-09-05
Rights accessOpen Access
Attribution-NonCommercial-NoDerivs 3.0 Spain
Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain
Abstract
In this paper, high-capacity energy storage devices based on macroporous silicon are demonstrated. Small footprint devices with large specific capacitances up to 100 nF/mm(2), and an absolute capacitance above 15 mu F, have been successfully fabricated using standard microelectronics and MEMS techniques. The fabricated devices are suitable for high-density system integration. The use of 3-D silicon structures allows achieving a large surface to volume ratio. The macroporous silicon structures are fabricated by electrochemical etching of silicon. This technique allows creating large structures of tubes with either straight or modulated radial profiles in depth. Furthermore, a very large aspect ratio is possible with this fabrication method. Macroporous silicon grown this way permits well-controlled structure definition with excellent repeatability and surface quality. Additionally, structure geometry can be accurately controlled to meet designer specifications. Macroporous silicon is used as one of the electrodes over which a silicon dioxide insulating layer is grown. Several insulator thicknesses have been tested. The second capacitor electrode is a solid nickel filling of the pores prepared by electroplating in a low-temperature industry standard process. The use of high-conductivity materials allows reaching small equivalent series resistance near 1 a
CitationVega, D. [et al.]. Macroporous silicon for high-capacitance devices using metal electrodes. "Nanoscale Research Letters", 05 Setembre 2014, vol. 9. 
URIhttp://hdl.handle.net/2117/24556
DOI10.1186/1556-276X-9-473
ISSN1556-276X
Publisher versionhttp://www.nanoscalereslett.com/content/9/1/473
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  • MNT - Grup de Recerca en Micro i Nanotecnologies - Articles de revista [345]
  • Departament d'Enginyeria Electrònica - Articles de revista [1.531]
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