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Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
dc.contributor.author | Marsal Garví, Lluís F. |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Pallarés Marzal, Josep |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2008-12-15T10:01:53Z |
dc.date.available | 2008-12-15T10:01:53Z |
dc.date.created | 2003-03-24 |
dc.date.issued | 2003-08-15 |
dc.identifier.citation | Marsal, L.F.; Martín, I.; Pallarés, J.; Orpella, A.; Alcubilla, R. Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes. A: Journal of Applied Physics, 2003, v.94, p.2622-2626. |
dc.identifier.issn | 0021-8979 |
dc.identifier.uri | http://hdl.handle.net/2117/2441 |
dc.description.abstract | P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical transport properties of a-Si0.8C0.2 :H/c-Si diodes were investigated by measuring their current–voltage characteristics. From the dark current–voltage characteristics measured at different temperatures (298–373 K), transport mechanisms were analyzed in detail. Two carrier transport mechanisms were found to be the origin of forward current. At low bias voltage and temperatures above 320 K as-deposited diodes are dominated by recombination currents on the amorphous side of the space charge region whereas annealed diodes are mainly dominated by diffusion mechanisms. In contrast, at temperatures below 320 K, both types of diodes are mainly dominated by multitunneling capture emission. At higher voltages, the current becomes space charge limited for both diodes throughout the temperature range studied. |
dc.format.extent | 5 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Silicon compounds |
dc.subject.lcsh | Hydrogenation. |
dc.subject.lcsh | Amorphous semiconductors. |
dc.subject.other | Amorphous silicon-carbon |
dc.subject.other | Amorphous semiconductors |
dc.subject.other | Annealing effects |
dc.subject.other | Carrier transport mechanism |
dc.subject.other | Conduction mechanisms |
dc.subject.other | Dark conductivity |
dc.subject.other | Dark current-voltage characteristics |
dc.subject.other | Electrical transport properties |
dc.subject.other | Elemental semiconductors |
dc.subject.other | Forward current |
dc.subject.other | Multitunneling capture emission |
dc.subject.other | p-n heterojunctions |
dc.subject.other | Recombination currents |
dc.subject.other | Semiconductor device measurement |
dc.subject.other | Semiconductor diodes |
dc.subject.other | Silicon compounds |
dc.subject.other | Space-charge-limited conduction |
dc.subject.other | Space charge limited current |
dc.subject.other | Temperature effects |
dc.subject.other | Wide band gap semiconductors |
dc.title | Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes |
dc.type | Article |
dc.subject.lemac | Silici |
dc.subject.lemac | Hidrogen |
dc.subject.lemac | Semiconductors amorfs |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1063/1.1591073 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Restricted access - publisher's policy |
dc.relation.projectidctt | TIC2002-04182-C02 |
local.personalitzacitacio | true |
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