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dc.contributor.authorMarsal Garví, Lluís F.
dc.contributor.authorMartín García, Isidro
dc.contributor.authorPallarés Marzal, Josep
dc.contributor.authorOrpella García, Alberto
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2008-12-15T10:01:53Z
dc.date.available2008-12-15T10:01:53Z
dc.date.created2003-03-24
dc.date.issued2003-08-15
dc.identifier.citationMarsal, L.F.; Martín, I.; Pallarés, J.; Orpella, A.; Alcubilla, R. Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes. A: Journal of Applied Physics, 2003, v.94, p.2622-2626.
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/2117/2441
dc.description.abstractP1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical transport properties of a-Si0.8C0.2 :H/c-Si diodes were investigated by measuring their current–voltage characteristics. From the dark current–voltage characteristics measured at different temperatures (298–373 K), transport mechanisms were analyzed in detail. Two carrier transport mechanisms were found to be the origin of forward current. At low bias voltage and temperatures above 320 K as-deposited diodes are dominated by recombination currents on the amorphous side of the space charge region whereas annealed diodes are mainly dominated by diffusion mechanisms. In contrast, at temperatures below 320 K, both types of diodes are mainly dominated by multitunneling capture emission. At higher voltages, the current becomes space charge limited for both diodes throughout the temperature range studied.
dc.format.extent5
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshSilicon compounds
dc.subject.lcshHydrogenation.
dc.subject.lcshAmorphous semiconductors.
dc.subject.otherAmorphous silicon-carbon
dc.subject.otherAmorphous semiconductors
dc.subject.otherAnnealing effects
dc.subject.otherCarrier transport mechanism
dc.subject.otherConduction mechanisms
dc.subject.otherDark conductivity
dc.subject.otherDark current-voltage characteristics
dc.subject.otherElectrical transport properties
dc.subject.otherElemental semiconductors
dc.subject.otherForward current
dc.subject.otherMultitunneling capture emission
dc.subject.otherp-n heterojunctions
dc.subject.otherRecombination currents
dc.subject.otherSemiconductor device measurement
dc.subject.otherSemiconductor diodes
dc.subject.otherSilicon compounds
dc.subject.otherSpace-charge-limited conduction
dc.subject.otherSpace charge limited current
dc.subject.otherTemperature effects
dc.subject.otherWide band gap semiconductors
dc.titleAnnealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
dc.typeArticle
dc.subject.lemacSilici
dc.subject.lemacHidrogen
dc.subject.lemacSemiconductors amorfs
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1063/1.1591073
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.relation.projectidcttTIC2002-04182-C02
local.personalitzacitaciotrue


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