Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes
Marsal.pdf (76,16Kb) (Restricted access) Request copy
Què és aquest botó?
Aquest botó permet demanar una còpia d'un document restringit a l'autor. Es mostra quan:
- Disposem del correu electrònic de l'autor
- El document té una mida inferior a 20 Mb
- Es tracta d'un document d'accés restringit per decisió de l'autor o d'un document d'accés restringit per política de l'editorial
PublisherAmerican Institute of Physics
Rights accessRestricted access - publisher's policy
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
P1-type hydrogenated amorphous silicon–carbon (a-Si12xCx :H) on n-type crystalline silicon (c-Si) heterojunction diodes were fabricated and characterized electrically. The effects of thermal annealing on the electrical transport properties of a-Si0.8C0.2 :H/c-Si diodes were investigated by measuring their current–voltage characteristics. From the dark current–voltage characteristics measured at different temperatures (298–373 K), transport mechanisms were analyzed in detail. Two carrier transport mechanisms were found to be the origin of forward current. At low bias voltage and temperatures above 320 K as-deposited diodes are dominated by recombination currents on the amorphous side of the space charge region whereas annealed diodes are mainly dominated by diffusion mechanisms. In contrast, at temperatures below 320 K, both types of diodes are mainly dominated by multitunneling capture emission. At higher voltages, the current becomes space charge limited for both diodes throughout the temperature range studied.
CitationMarsal, L.F.; Martín, I.; Pallarés, J.; Orpella, A.; Alcubilla, R. Annealing effects on the conduction mechanisms of p+-amorphous- Si0.8C0.2:H/n-crystalline-Si diodes. A: Journal of Applied Physics, 2003, v.94, p.2622-2626.