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Improvement of crystalline silicon surface passivation by hidrogen plasma treatment
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Vetter, Michael |
dc.contributor.author | Orpella García, Alberto |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.author | Kharchenko, A.V. |
dc.contributor.author | Roca i Cabarrocas, Pere |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2008-12-15T09:25:17Z |
dc.date.available | 2008-12-15T09:25:17Z |
dc.date.created | 2003-10-16 |
dc.date.issued | 2004-03-01 |
dc.identifier.citation | Martín, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; Roca, P. Improvement of crystalline silicon surface passivation by hidrogen plasma treatment. A: Applied Physics Letters, 2004, v. 89, p. 1474-1746. |
dc.identifier.issn | 0003-6951 |
dc.identifier.uri | http://hdl.handle.net/2117/2440 |
dc.description.abstract | A completely dry low-temperature process has been developed to passivate 3.3 Ωcm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H) deposition, without breaking the vacuum. We measured effective lifetime, Τ eff , through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. Seff values lower than 19 cm s -1 were achieved using a hydrogen plasma treatment and an a-SiCx:H film deposited at 300°C. |
dc.format.extent | 3 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Microelectronics. |
dc.subject.lcsh | Silicon. |
dc.subject.other | Crystalline silicon surface passivation |
dc.subject.other | Dry low-temperature process |
dc.subject.other | Effective lifetime |
dc.subject.other | Elemental semiconductors |
dc.subject.other | Etching |
dc.subject.other | Hydrogen plasma treatment |
dc.subject.other | Hydrogenated amorphous silicon carbide |
dc.subject.other | p-type crystalline silicon surface |
dc.subject.other | Passivation |
dc.subject.other | Plasma materials processing |
dc.subject.other | Quasisteady state photoconductance |
dc.subject.other | Silicon compounds |
dc.subject.other | Wide band gap semiconductors |
dc.title | Improvement of crystalline silicon surface passivation by hidrogen plasma treatment |
dc.type | Article |
dc.subject.lemac | Silici |
dc.subject.lemac | Microelectrònica |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1063/1.1647702 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 763570 |
dc.relation.projectidctt | TIC2002-04184-C02 |
dc.relation.projectidctt | PICS 2002-4 |
local.personalitzacitacio | true |
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