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dc.contributor.authorSaberkari, Alireza
dc.contributor.authorZiabakhsh, Soheil
dc.contributor.authorMartínez García, Herminio
dc.contributor.authorAlarcón Cot, Eduardo José
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-10-10T13:49:54Z
dc.date.created2014-05-19
dc.date.issued2014-05-19
dc.identifier.citationSaberkari, A. [et al.]. Design and comparison of flipped active inductors with high quality factors. "Electronics Letters", 19 Maig 2014, vol. 50, núm. 13, p. 925-927.
dc.identifier.issn0013-5194
dc.identifier.urihttp://hdl.handle.net/2117/24337
dc.description.abstractA new design based on the flipped-structure for RF active inductors is presented. The conventional flipped-active inductor (FAI) composed of only two transistors is considered as a starting structure. However, it suffers from low-voltage swing, which increases the nonlinearity. Additionally, it requires high power consumption to achieve adequate inductance and quality factor values. A circuit topology named cascoded FAI (CASFAI) based on the basic FAI is proposed. A common-gate transistor added in the feedback path of the proposed CASFAI results in an increase of the voltage swing and linearity as well as the feedback gain. The performance metrics of such active inductors are benchmarked by analytical models and validated in the ADS using a 0.18 µm CMOS process. The results indicate that the CASFAI can achieve a notably higher quality factor and higher inductance values while consuming less power in comparison to the basic FAI.
dc.format.extent3 p.
dc.language.isoeng
dc.publisherInstitution of Electrical Engineers
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica
dc.subject.lcshOptoelectronics
dc.subject.otherEngineering controlled terms: Bandpass filters
dc.subject.otherCMOS integrated circuits
dc.subject.otherElectric network topology
dc.subject.otherInductance
dc.titleDesign and comparison of flipped active inductors with high quality factors
dc.typeArticle
dc.subject.lemacOptoelectrònica
dc.contributor.groupUniversitat Politècnica de Catalunya. EPIC - Energy Processing and Integrated Circuits
dc.identifier.doi10.1049/el.2014.0488
dc.rights.accessRestricted access - publisher's policy
drac.iddocument14994540
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorSaberkari, A.; Ziabakhsh, S.; Martinez, H.; Alarcon, E.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameElectronics Letters
upcommons.citation.volume50
upcommons.citation.number13
upcommons.citation.startingPage925
upcommons.citation.endingPage927


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