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dc.contributor.authorNadaždy, Vojtech
dc.contributor.authorDurný, Rudolf
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorCheylan, Stephanie
dc.contributor.authorGmucová, K.
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2008-12-02T12:50:34Z
dc.date.available2008-12-02T12:50:34Z
dc.date.created2006-11-20
dc.date.issued2007-02-28
dc.identifier.citationNadaždy, V.; Durný, R.; Puigdollers, J.; Voz, C.; Cheylan, S.; Gmicová, K. Experimental observation of oxygen-related defect state in pentacene thin films. A: Applied Physics Letters, 2007, vol,. 90, 092112.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/2117/2425
dc.description.abstractThe authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6 eV and attempt-to-escape frequency of 5x1012 s−1, can be reversibly created/removed under a negative/positive bias voltage applied to the aluminum/ pentacene Schottky diode at room temperature in air. Annealing the sample in vacuum at 360 K removes the defect and prevents its creation by application of any bias voltage in vacuum. Considering recent calculations of defects in pentacene the authors assume that the defect is formed by replacing one of the hydrogen atoms by an oxygen atom (C22 H13 O).
dc.format.extent3
dc.language.isoeng
dc.publisherAmerican Institute of Physics
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshPentacene
dc.subject.lcshThin films
dc.subject.otherSchottky diode
dc.subject.otherAttempt-to-escape frequency
dc.subject.otherHydrogen atom replacement
dc.subject.otherPentacene thin films
dc.subject.otherDefects in pentacene
dc.subject.otherNegative bias voltage
dc.subject.otherOrganic semiconductors
dc.subject.otherOxigen atom
dc.subject.otherPositive bias voltage
dc.subject.otherSchottky barrier
dc.titleExperimental observation of oxygen-related defect state in pentacene thin films
dc.typeArticle
dc.subject.lemacNanotecnologia
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1063/1.2710203
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.relation.projectidcttCICYT-TEC2005-02716
local.personalitzacitaciotrue


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