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Experimental observation of oxygen-related defect state in pentacene thin films
dc.contributor.author | Nadaždy, Vojtech |
dc.contributor.author | Durný, Rudolf |
dc.contributor.author | Puigdollers i González, Joaquim |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Cheylan, Stephanie |
dc.contributor.author | Gmucová, K. |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2008-12-02T12:50:34Z |
dc.date.available | 2008-12-02T12:50:34Z |
dc.date.created | 2006-11-20 |
dc.date.issued | 2007-02-28 |
dc.identifier.citation | Nadaždy, V.; Durný, R.; Puigdollers, J.; Voz, C.; Cheylan, S.; Gmicová, K. Experimental observation of oxygen-related defect state in pentacene thin films. A: Applied Physics Letters, 2007, vol,. 90, 092112. |
dc.identifier.issn | 0003-6951 |
dc.identifier.uri | http://hdl.handle.net/2117/2425 |
dc.description.abstract | The authors report on a metastable defect observed in pentacene thin films. The defect, which is characterized by a hole trap at Ev+0.6 eV and attempt-to-escape frequency of 5x1012 s−1, can be reversibly created/removed under a negative/positive bias voltage applied to the aluminum/ pentacene Schottky diode at room temperature in air. Annealing the sample in vacuum at 360 K removes the defect and prevents its creation by application of any bias voltage in vacuum. Considering recent calculations of defects in pentacene the authors assume that the defect is formed by replacing one of the hydrogen atoms by an oxygen atom (C22 H13 O). |
dc.format.extent | 3 |
dc.language.iso | eng |
dc.publisher | American Institute of Physics |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica |
dc.subject.lcsh | Pentacene |
dc.subject.lcsh | Thin films |
dc.subject.other | Schottky diode |
dc.subject.other | Attempt-to-escape frequency |
dc.subject.other | Hydrogen atom replacement |
dc.subject.other | Pentacene thin films |
dc.subject.other | Defects in pentacene |
dc.subject.other | Negative bias voltage |
dc.subject.other | Organic semiconductors |
dc.subject.other | Oxigen atom |
dc.subject.other | Positive bias voltage |
dc.subject.other | Schottky barrier |
dc.title | Experimental observation of oxygen-related defect state in pentacene thin films |
dc.type | Article |
dc.subject.lemac | Nanotecnologia |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1063/1.2710203 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Restricted access - publisher's policy |
dc.relation.projectidctt | CICYT-TEC2005-02716 |
local.personalitzacitacio | true |
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