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dc.contributor.authorCalomarde Palomino, Antonio
dc.contributor.authorAmat Bertran, Esteve
dc.contributor.authorMoll Echeto, Francisco de Borja
dc.contributor.authorVigara Campmany, Julio Enrique
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-05-21T11:29:19Z
dc.date.created2014-04-01
dc.date.issued2014-04-01
dc.identifier.citationCalomarde, A. [et al.]. SET and noise fault tolerant circuit design techniques: application to 7 nm FinFET. "Microelectronics reliability", 01 Abril 2014, vol. 54, núm. 4, p. 738-745.
dc.identifier.issn0026-2714
dc.identifier.urihttp://hdl.handle.net/2117/23028
dc.description.abstractIn the near future of high component density and low-power technologies, soft errors occurring not only in memory systems and latches but also in the combinational parts of logic circuits will seriously affect the reliable operation of integrated circuits. This paper presents a novel design style which reduces the impact of radiation-induced single event transients (SET) on logic circuits, and enhances the robustness in noisy environments. The independent design style of this method achieves SET mitigation and noise immunity by strengthening the sensitive nodes using a technique similar to feedback. A realization for this methodology is presented in 7 nm FinFET and in order to check the accuracy of our proposal, we compare it with others techniques for hardening radiation at the transistor level against a single event transient. Simulation results show that the proposed method has a good soft error tolerance capability as well as better noise immunity.
dc.format.extent8 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshIntegrated circuits
dc.subject.lcshNoise control
dc.titleSET and noise fault tolerant circuit design techniques: application to 7 nm FinFET
dc.typeArticle
dc.subject.lemacSoroll--Control
dc.subject.lemacCircuits integrats
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.contributor.groupUniversitat Politècnica de Catalunya. INSIDE - Innovació en Sistemes per al Disseny i la Formació a l'Enginyeria
dc.identifier.doi10.1016/j.microrel.2013.12.018
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0026271413004708
dc.rights.accessOpen Access
local.identifier.drac13995713
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorCalomarde, A.; Amat, E.; Moll, F.; Vigara, J.; Rubio, J.A.
local.citation.publicationNameMicroelectronics reliability
local.citation.volume54
local.citation.number4
local.citation.startingPage738
local.citation.endingPage745


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