Show simple item record

dc.contributor.authorMarsal Vinade, Albert
dc.contributor.authorCarreras Seguí, Paz
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorGalindo Lorente, Sergi
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.authorBertomeu Balaguero, Joan
dc.contributor.authorAntony, Aldrin
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-04-02T12:24:50Z
dc.date.created2014-03-31
dc.date.issued2014-03-31
dc.identifier.citationMarsal, A. [et al.]. Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors. "Thin solid films", 31 Març 2014, vol. 555, p. 107-111.
dc.identifier.issn0040-6090
dc.identifier.urihttp://hdl.handle.net/2117/22490
dc.description.abstractIn this work, zinc indium tin oxide layers with different compositions are used as the active layer of thin film transistors. This multicomponent transparent conductive oxide is gaining great interest due to its reduced content of the scarce indium element. Experimental data indicate that the incorporation of zinc promotes the creation of oxygen vacancies, which results in a higher free carrier density. In thin-film transistors this effect leads to a higher off current and threshold voltage values. The field-effect mobility is also strongly degraded, probably due to coulomb scattering by ionized defects. A post deposition annealing in air reduces the density of oxygen vacancies and improves the field-effect mobility by orders of magnitude. Finally, the electrical characteristics of the fabricated thin-film transistors have been analyzed to estimate the density of states in the gap of the active layers. These measurements reveal a clear peak located at 0.3 eV from the conduction band edge that could be attributed to oxygen vacancies. (C) 2013 Elsevier B.V. All rights reserved.
dc.format.extent5 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subjectÀrees temàtiques de la UPC::Ciències de la visió::Òptica física
dc.subjectÀrees temàtiques de la UPC::Enginyeria dels materials
dc.subject.lcshThin films
dc.subject.otherZinc-indium-tin-oxide
dc.subject.otherThin films
dc.subject.otherThin-film transistor
dc.subject.otherDensity-of-states
dc.subject.otherMAGNETRON COSPUTTERING SYSTEM
dc.subject.otherZNO
dc.titleCompositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors
dc.typeArticle
dc.subject.lemacPel·lícules fines
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.tsf.2013.08.010
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S0040609013013023
dc.rights.accessRestricted access - publisher's policy
drac.iddocument13860637
dc.description.versionPostprint (published version)
dc.relation.projectidinfo:eu-repo/grantAgreement/EC/FP7/227127/EU/Smart light collecting system for the efficiency enhancement of solar cells/EPHOCELL
dc.date.lift10000-01-01
upcommons.citation.authorMarsal, A.; Carreras, P.; Puigdollers, J.; Voz, C.; Galindo , S.; Alcubilla, R.; Bertomeu, J.; Antony, A.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameThin solid films
upcommons.citation.volume555
upcommons.citation.startingPage107
upcommons.citation.endingPage111


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder