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dc.contributor.authorAbdallah, L.
dc.contributor.authorStratigopoulos, H. G.
dc.contributor.authorMir, S.
dc.contributor.authorAltet Sanahujes, Josep
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-04-01T12:55:20Z
dc.date.created2013
dc.date.issued2013
dc.identifier.citationAbdallah, L. [et al.]. Defect-oriented non-intrusive RF test using on-chip temperature sensors. A: IEEE VLSI Test Symposium. "2013 IEEE 31st VLSI Test Symposium (VTS): proceedings: April 29th - May 1st, 2013: Berkeley, California, USA". Berkeley, CA: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 57-62.
dc.identifier.isbn978-1-4673-5543-8
dc.identifier.urihttp://hdl.handle.net/2117/22468
dc.description.abstractWe present a built-in, defect-oriented test approach for RF circuits that is based on thermal monitoring. A defect will change the power dissipation of the circuit under test from its expected range of values which, in turn, will induce a change in the expected temperature in the substrate near the circuit. Thus, an on-chip temperature sensor that monitors the temperature near the circuit can reveal the existence of the defect. This test approach has the key advantage of being non-intrusive and transparent to the design since the temperature sensor is not electrically connected to the circuit. We discuss the basics of thermal monitoring, the design of the temperature sensor, as well as the test scheme. The technique is demonstrated on fabricated chips where a temperature sensor is employed to monitor an RF low noise amplifier.
dc.format.extent6 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Instrumentació i mesura::Sensors i actuadors
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshTemperature measuring instruments
dc.subject.lcshIntegrated circuits -- Verification
dc.subject.otherIntegrated circuit testing
dc.subject.otherLow noise amplifiers
dc.subject.otherRadiofrequency amplifiers
dc.subject.otherTemperature sensors
dc.titleDefect-oriented non-intrusive RF test using on-chip temperature sensors
dc.typeConference report
dc.subject.lemacTermometria -- Aparells i instruments
dc.subject.lemacCircuits integrats -- Verificació
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1109/VTS.2013.6548889
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6548889
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac12884090
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorAbdallah, L.; Stratigopoulos, H.; Mir, S.; Altet, J.
local.citation.contributorIEEE VLSI Test Symposium
local.citation.pubplaceBerkeley, CA
local.citation.publicationName2013 IEEE 31st VLSI Test Symposium (VTS): proceedings: April 29th - May 1st, 2013: Berkeley, California, USA
local.citation.startingPage57
local.citation.endingPage62


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