A compact noise model for carbon nanotube FETs

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Landauer, Gerhard Martin
González Jiménez, José Luis
Document typeConference report
Defense date2012
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
Attribution-NonCommercial-NoDerivs 3.0 Spain
This work is protected by the corresponding intellectual and industrial property rights. Except where otherwise noted, its contents are licensed under a Creative Commons license : Attribution-NonCommercial-NoDerivs 3.0 Spain
Abstract
CitationLandauer, G.M.; Gonzalez, J. A compact noise model for carbon nanotube FETs. A: International Semiconductor Conference Dresden-Grenoble. "2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 53-56. 
URIhttp://hdl.handle.net/2117/22161
DOI10.1109/ISCDG.2012.6359993
ISBN9781467317177
Publisher versionhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6359993
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