A compact noise model for carbon nanotube FETs
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
This paper focuses on the development of a compact noise model for radiofrequency (RF) carbon nanotube field-effect transistors (CNFET). The noise mechanisms in these devices are discussed and the impact of the different noise sources is analyzed. For the RF-CNFET under investigation a mínimum noise figure NFmin = 0.104 dB at 60 GHz is predicted. Our model is usable with conventional circuit simulators, which provides a basis for further investigations on CNFET-based RF Building blocks.
CitationLandauer, G.M.; Gonzalez, J. A compact noise model for carbon nanotube FETs. A: International Semiconductor Conference Dresden-Grenoble. "2012 International Semiconductor Conference Dresden-Grenoble (ISCDG 2012): Grenoble, France: 24-26 September 2012". Grenoble: Institute of Electrical and Electronics Engineers (IEEE), 2012, p. 53-56.
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