Mostra el registre d'ítem simple
Impact of finfet and III-V/Ge technology on logic and memory cell behavior
dc.contributor.author | Amat Bertran, Esteve |
dc.contributor.author | Calomarde Palomino, Antonio |
dc.contributor.author | García Almudéver, Carmen |
dc.contributor.author | Aymerich Capdevila, Nivard |
dc.contributor.author | Canal Corretger, Ramon |
dc.contributor.author | Rubio Sola, Jose Antonio |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Arquitectura de Computadors |
dc.date.accessioned | 2014-03-06T19:20:47Z |
dc.date.created | 2013-11-20 |
dc.date.issued | 2013-11-20 |
dc.identifier.citation | Amat, E. [et al.]. Impact of finfet and III-V/Ge technology on logic and memory cell behavior. "IEEE transactions on device and materials reliability", 20 Novembre 2013, vol. 14, núm. 1, p. 1-15. |
dc.identifier.issn | 1530-4388 |
dc.identifier.uri | http://hdl.handle.net/2117/21907 |
dc.description.abstract | In this work, we assess the performance of a ring oscillator and a DRAM cell when they are implemented with different technologies (planar CMOS, FinFET and III-V MOSFETs), and subjected to different reliability scenarios (variability and soft errors). FinFET-based circuits show the highest robustness against variability and soft error environments. |
dc.format.extent | 15 p. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats |
dc.subject.lcsh | Integrated circuits |
dc.subject.other | DRAM |
dc.subject.other | III–V semiconductor materials |
dc.subject.other | Integrated circuit reliability |
dc.subject.other | Ring oscillators |
dc.title | Impact of finfet and III-V/Ge technology on logic and memory cell behavior |
dc.type | Article |
dc.subject.lemac | Circuits integrats |
dc.contributor.group | Universitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions |
dc.contributor.group | Universitat Politècnica de Catalunya. ARCO - Microarquitectura i Compiladors |
dc.identifier.doi | 10.1109/TDMR.2013.2291410 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6670777 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 13031806 |
dc.description.version | Postprint (published version) |
dc.relation.projectid | info:eu-repo/grantAgreement/EC/FP7/248789/EU/TERASCALE RELIABLE ADAPTIVE MEMORY SYSTEMS/TRAMS |
dc.date.lift | 10000-01-01 |
local.citation.author | Amat, E.; Calomarde, A.; Garcia, C.; Aymerich, N.; Canal, R.; Rubio, J.A. |
local.citation.publicationName | IEEE transactions on device and materials reliability |
local.citation.volume | 14 |
local.citation.number | 1 |
local.citation.startingPage | 1 |
local.citation.endingPage | 15 |
Fitxers d'aquest items
Aquest ítem apareix a les col·leccions següents
-
Articles de revista [1.050]
-
Articles de revista [92]
-
Articles de revista [1.729]
-
Articles de revista [68]