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3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts
dc.contributor.author | Carrió Díaz, David |
dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | López, Gema |
dc.contributor.author | López González, Juan Miguel |
dc.contributor.author | Martín García, Isidro |
dc.contributor.author | Voz Sánchez, Cristóbal |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2014-02-27T13:44:34Z |
dc.date.created | 2013 |
dc.date.issued | 2013 |
dc.identifier.citation | Carrió, D. [et al.]. 3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts. A: European Photovoltaic Solar Energy Conference and Exhibition. "Proceedings EU PSVSEC 2013, 28th European Photovoltaic Solar Energy Conference and Exhibition, Parc des Expositions Paris Nord Villepinte, Paris, France, Conference 30 Sep - 04 Oct 2013, Exhibition 01 Oct - 03 Oct 2013". Paris Nord Villepinte: 2013, p. 1607-1610. |
dc.identifier.isbn | 3-936338-33-7 |
dc.identifier.uri | http://hdl.handle.net/2117/21789 |
dc.description.abstract | The back-contact back-junction BC-BJ solar cell concept is a promising photovoltaic structure for both laboratory and industrial c-Si solar cells. High efficiency devices based on this concept have been reported in the past using either diffused regions or applying the heterojunction with intrinsic thin layer HIT concept to perform both base and emitter contacts. In this work we use 3D numerical simulations to study the impact of technological parameters on device performance of c-Si(p) BC-BJ solar cells with point-like doped contacts. Numerical simulations allow us to optimize rear contact geometry as a trade-off between recombination and base resistive losses, leading to photovoltaic efficiencies higher than 18.3% and up to 22.3% on 2.2 cm FZ substrates depending on the back contact pattern and the passivation quality of base contacts. |
dc.format.extent | 4 p. |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars |
dc.subject.lcsh | Solar cells |
dc.subject.lcsh | Solar energy |
dc.subject.other | C-Si |
dc.subject.other | 3D simulations |
dc.subject.other | Laser processing |
dc.subject.other | Back-contact back-juntion BC-BJ solar cells |
dc.subject.other | Point-like contacts |
dc.title | 3D simulations of back-contact back-junction c-Si(P) solar cells with doped point contacts |
dc.type | Conference report |
dc.subject.lemac | Cèl·lules solars |
dc.subject.lemac | Energia solar |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.4229/28thEUPVSEC2013-2CV.3.44 |
dc.description.peerreviewed | Peer Reviewed |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 12987982 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Carrió, D.; Ortega, P.; López, G.; Lopez, J.; Martin, I.; Voz, C.; Alcubilla, R. |
local.citation.contributor | European Photovoltaic Solar Energy Conference and Exhibition |
local.citation.pubplace | Paris Nord Villepinte |
local.citation.publicationName | Proceedings EU PSVSEC 2013, 28th European Photovoltaic Solar Energy Conference and Exhibition, Parc des Expositions Paris Nord Villepinte, Paris, France, Conference 30 Sep - 04 Oct 2013, Exhibition 01 Oct - 03 Oct 2013 |
local.citation.startingPage | 1607 |
local.citation.endingPage | 1610 |