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Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules

dc.contributor.authorPiasecki, S.
dc.contributor.authorMir Cantarellas, Antonio
dc.contributor.authorRabkowski, J.
dc.contributor.authorRodríguez Cortés, Pedro
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Elèctrica
dc.date.accessioned2014-02-21T09:17:59Z
dc.date.created2013
dc.date.issued2013
dc.identifier.citationPiasecki, S. [et al.]. Design of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules. A: IECON - IEEE Annual Conference of Industrial Electronics Society. "Proceeding of 39th IEEE Annual Conference of Industrial Electronics Society (IECON)". Vienna: 2013, p. 5957-5962.
dc.identifier.urihttp://hdl.handle.net/2117/21686
dc.description.abstractThis paper presents a method for improving the design procedure of AC-DC power converters for power generation applications. The proposed methodology is based on selection of the most convenient configuration, in terms of switching frequency and design of the line filter, in order to minimize the overall losses in the system. In this work two types of semiconductor devices are considered: silicon IGBT and silicon carbide MOSFET for the design of a 100 kVA system, and they performance is compared. The AC-DC converter parameters, the design methodology and preliminary simulation results for representatives of Si IGBT and SiC MOSFET modules are presented.
dc.format.extent6 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència::Convertidors de corrent elèctric
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència::Convertidors de corrent elèctric
dc.subject.lcshElectric current converters
dc.subject.lcshDistributed generation of electric power
dc.subject.lcshMetal oxide semiconductor field-effect transistors
dc.subject.lcshElectric filters
dc.titleDesign of AC-DC power converters with LCL + tuned trap line filter using Si IGBT and SiC MOSFET modules
dc.typeConference report
dc.subject.lemacConvertidors altern-continu
dc.subject.lemacEnergia elèctrica -- Distribució
dc.subject.lemacMetall-òxid-semiconductors
dc.subject.lemacFiltres elèctrics
dc.contributor.groupUniversitat Politècnica de Catalunya. SEER - Sistemes Elèctrics d'Energia Renovable
dc.identifier.doi10.1109/IECON.2013.6700112
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6700112
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac13047203
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorPiasecki, S.; Cantarellas, A.M.; Rabkowski, J.; Rodriguez, P.
local.citation.contributorIECON - IEEE Annual Conference of Industrial Electronics Society
local.citation.pubplaceVienna
local.citation.publicationNameProceeding of 39th IEEE Annual Conference of Industrial Electronics Society (IECON)
local.citation.startingPage5957
local.citation.endingPage5962


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