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dc.contributor.authorPfattner, Raphael
dc.contributor.authorMoreno Sierra, César
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.authorRovira, Concepció
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorMas Torrent, Marta
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-02-19T19:35:33Z
dc.date.created2014-01
dc.date.issued2014-01
dc.identifier.citationPfattner, R. [et al.]. Restraints in low dimensional organic semiconductor devices at high current densities. "Organic electronics", Gener 2014, vol. 1199, núm. 15, p. 211-215.
dc.identifier.issn1566-1199
dc.identifier.urihttp://hdl.handle.net/2117/21661
dc.description.abstractThe understanding of the charge carrier transport in electronic materials is of crucial interest for the design of efficient devices including especially the restraints that arise from device miniaturization. In this work the performance of organic thin-film and single crystal field-effect transistors with the same active material was studied in detail focusing on the high current density regime, where a pronounced non-hysteretic maximum in the transconductance was found. Interestingly, in this operation mode for both, thin films and single crystals, comparable densities of free and gate-induced charge carriers were estimated. Kelvin probe microscopy was used to measure the contact potential difference and the electrical field along the transistor channel during device operation exhibiting the formation of local space charges in the high current density regime.
dc.format.extent5 p.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Electrònica molecular
dc.subject.lcshMolecular electronics
dc.subject.lcshElectronic apparatus and appliances
dc.subject.otherHigh current densities
dc.subject.otherKelvin probe microscopy
dc.subject.otherOrganic field-effect transistor
dc.subject.otherSpace charges
dc.subject.otherTransconductance
dc.titleRestraints in low dimensional organic semiconductor devices at high current densities
dc.typeArticle
dc.subject.lemacElectrònica molecular
dc.subject.lemacElectrònica -- Materials
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1016/j.orgel.2013.10.026
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://www.sciencedirect.com/science/article/pii/S1566119913004710
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac13046499
dc.description.versionPostprint (published version)
dc.relation.projectidinfo:eu-repo/grantAgreement/EC/FP7/306826/EU/Surface Self-Assembled Molecular Electronic Devices: Logic Gates, Memories and Sensors/E-GAMES
dc.date.lift10000-01-01
local.citation.authorPfattner, R.; Moreno, C.; Voz, C.; Alcubilla, R.; Rovira, C.; Puigdollers, J.; Mas, M.
local.citation.publicationNameOrganic electronics
local.citation.volume1199
local.citation.number15
local.citation.startingPage211
local.citation.endingPage215


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