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Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

dc.contributor.authorSilvestre Bergés, Santiago
dc.contributor.authorBoronat Moreiro, Alfredo
dc.contributor.authorColina Brito, Mónica Alejandra
dc.contributor.authorCastañer Muñoz, Luis María
dc.contributor.authorOlea, Javier
dc.contributor.authorPastor, David
dc.contributor.authorDelPrado, A.
dc.contributor.authorMartil, Ignacio
dc.contributor.authorGonzalez Diaz, German
dc.contributor.authorLuque, Antonio
dc.contributor.authorAntolin, Elisa
dc.contributor.authorHernandez, Estela
dc.contributor.authorRamiro, Iñigo
dc.contributor.authorArtacho, Irene
dc.contributor.authorLópez, Esther
dc.contributor.authorMartí, Antonio
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2014-01-14T16:44:59Z
dc.date.created2013-11
dc.date.issued2013-11
dc.identifier.citationSilvestre, S. [et al.]. Sub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells. "Japanese journal of applied physics", Novembre 2013, vol. 52, p. 122302-1-122302-5.
dc.identifier.issn0021-4922
dc.identifier.urihttp://hdl.handle.net/2117/21236
dc.description.abstractIn this work we present the manufacturing processes and results obtained from the characterization of heterojunction with intrinsic thin layer solar cells that include a heavily Ti ion implanted Si absorbing layer. The cells exhibit external circuit photocurrent at photon energies well below the Si bandgap. We discuss the origin of this below-bandgap photocurrent and the modifications in the hydrogenated amorphous intrinsic Si layer thickness to increase the open-circuit voltage.
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica::Cèl·lules solars
dc.subject.lcshSolar cells
dc.titleSub-Bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells
dc.typeArticle
dc.subject.lemacCèl·lules solars
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.7567/JJAP.52.122302
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://iopscience.iop.org/1347-4065/52/12R/122302
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac12968357
dc.description.versionPostprint (published version)
dc.relation.projectidinfo:eu-repo/grantAgreement/EC/FP7/302489/EU/Study on intermediate band materials with prevailing radiative carrier recombination for superior solar energy applications/SIRACUSA
dc.date.lift10000-01-01
local.citation.authorSilvestre, S.; Boronat, A.; Colina, M.A.; Castañer, L.; Olea, J.; Pastor, D.; DelPrado, A.; Martil, I.; Gonzalez Diaz, G.; Luque, A.; Antolin, E.; Hernandez, E.; Ramiro, I.; Artacho, I.; López, E.; Martí, A.
local.citation.publicationNameJapanese journal of applied physics
local.citation.volume52
local.citation.startingPage122302-1
local.citation.endingPage122302-5


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