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dc.contributor.authorBalcells Sendra, Josep
dc.contributor.authorBogónez Franco, Francisco
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2013-11-25T17:04:09Z
dc.date.available2013-11-25T17:04:09Z
dc.date.created2013
dc.date.issued2013
dc.identifier.citationBalcells, J.; Bogonez, F. Effect of driver to gate coupling circuits on EMI produced by SiC MOSFETS. A: International Symposium on Electromagnetic Compatibility. "Proceedings of the 2013 International Symposium on Electromagnetic Compatibility.". Brugge: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 209-214.
dc.identifier.isbn978-1-4673-4979-6
dc.identifier.urihttp://hdl.handle.net/2117/20758
dc.description.abstractThis work presents a study of the influence of different gate driver circuits on the switching behavior and EMI produced by SiC MOSFET devices used in a boost converter. The paper includes several simulations of switching behavior using different VGS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOS gate and several tests of conducted and radiated EMI for each one of the interface circuits. The paper also includes a comparison of both aspects (switching and EMI) when using different gate voltage levels. The study reveals that gate voltage has little impact on switching behavior and therefore on conducted and radiated EMI, while gate RCD coupling circuits have a noticeable impact. The EMI reduction, when using the adequate driver-gate circuit may be in the order of 10 dB at certain frequencies in the conducted band and up to 20 dB for certain frequencies in the radiated band.
dc.format.extent6 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Electrònica de potència
dc.subject.lcshElectromagnetic compatibility
dc.subject.otherSiC
dc.subject.otherEMI
dc.subject.otherconducted EMI
dc.subject.otherradiated EMI
dc.subject.otherPower converters
dc.titleEffect of driver to gate coupling circuits on EMI produced by SiC MOSFETS
dc.typeConference report
dc.subject.lemacCompatibilitat electromagnètica
dc.contributor.groupUniversitat Politècnica de Catalunya. (TIEG) - Terrassa Industrial Electronics Group
dc.identifier.dlIEEE Catalog Number CFP1306F-USB, ISBN 978-1-4673-4979-6
dc.rights.accessOpen Access
local.identifier.drac12892670
dc.description.versionPostprint (author’s final draft)
local.citation.authorBalcells, J.; Bogonez, F.
local.citation.contributorInternational Symposium on Electromagnetic Compatibility
local.citation.pubplaceBrugge
local.citation.publicationNameProceedings of the 2013 International Symposium on Electromagnetic Compatibility.
local.citation.startingPage209
local.citation.endingPage214


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