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dc.contributor.authorRadziunas, Mindaugas
dc.contributor.authorBotey Cumella, Muriel
dc.contributor.authorHerrero Simon, Ramon
dc.contributor.authorStaliunas, Kestutis
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Física i Enginyeria Nuclear
dc.date.accessioned2013-11-22T12:32:13Z
dc.date.available2013-11-22T12:32:13Z
dc.date.created2013-09-23
dc.date.issued2013-09-23
dc.identifier.citationRadziunas, M. [et al.]. Intrinsic beam shaping mechanism in spatially modulated broad area semiconductor amplifiers. "Applied physics letters", 23 Setembre 2013, vol. 103, núm. 13, p. 132101-132101-4.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/2117/20702
dc.language.isoeng
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Física
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica
dc.subject.othernumerical analysis
dc.subject.otheroptical modulation
dc.subject.othersemiconductor optical amplifiers
dc.titleIntrinsic beam shaping mechanism in spatially modulated broad area semiconductor amplifiers
dc.typeArticle
dc.subject.lemacOptoelectrònica
dc.subject.lemacSemiconductors
dc.contributor.groupUniversitat Politècnica de Catalunya. DONLL - Dinàmica no Lineal, Òptica no Lineal i Làsers
dc.identifier.doi10.1063/1.4821251
dc.relation.publisherversionhttp://apl.aip.org/resource/1/applab/v103/i13/p132101_s1
dc.rights.accessOpen Access
drac.iddocument12792073
dc.description.versionPostprint (published version)
upcommons.citation.authorRadziunas, M.; Botey, M.; Herrero, R.; Staliunas, K.
upcommons.citation.publishedtrue
upcommons.citation.publicationNameApplied physics letters
upcommons.citation.volume103
upcommons.citation.number13
upcommons.citation.startingPage132101
upcommons.citation.endingPage132101-4


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