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A Highly time sensitive XOR gate for probe attempt detectors

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10.1109/TCSII.2013.2278126
 
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hdl:2117/20153

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Manich Bou, SalvadorMés informacióMés informacióMés informació
Strasser, Martin
Document typeArticle
Defense date2013-09-05
Rights accessRestricted access - publisher's policy
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
Abstract
Probe attempt detectors are sensors designed to protect buses of secure chips against the physical contact of probes. The operation principle of these detectors relies on the comparison of the delay propagation times between lines. CMOS XOR gates are very well suited for this comparison since they are small, fast, and compatible with the technology used in secure chips. However, the lack of activity while comparing matched lines and the limited reaction time pose a risk for tampering and decrease the sensitivity of the sensor, respectively. In this brief, a modification of a CMOS XOR gate is presented, which solves both the aforementioned problems.
CitationManich, S.; Strasser, M. A Highly time sensitive XOR gate for probe attempt detectors. "IEEE transactions on circuits and systems II: express briefs", 05 Setembre 2013. 
URIhttp://hdl.handle.net/2117/20153
DOI10.1109/TCSII.2013.2278126
ISSN1549-7747
Publisher versionhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6589211
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  • Departament d'Enginyeria Electrònica - Articles de revista [1.609]
  • QINE - Disseny de Baix Consum, Test, Verificació i Tolerància a Fallades - Articles de revista [47]
  • QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat - Articles de revista [73]
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