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dc.contributor.authorRodríguez Montañés, Rosa
dc.contributor.authorArumi Delgado, Daniel
dc.contributor.authorFigueras Pàmies, Joan
dc.contributor.authorEichenberger, S.
dc.contributor.authorHora, Camelia
dc.contributor.authorKruseman, B.
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2013-09-10T10:23:09Z
dc.date.available2013-09-10T10:23:09Z
dc.date.created2007-10
dc.date.issued2007-10
dc.identifier.citationRodriguez, R. [et al.]. Impact of gate tunnelling leakage on CMOS circuits with full open defects. "Electronics Letters", Octubre 2007, vol. 43, núm. Issue 21, p. 1140-1141.
dc.identifier.issn0013-5194
dc.identifier.urihttp://hdl.handle.net/2117/20118
dc.descriptionElectronics Letter of the Month
dc.description.abstractInterconnecting lines with full open defects become floating lines. In nanometric CMOS technologies, gate tunnelling leakage currents impact the behaviour of these lines, which cannot be considered electrically isolated anymore. The voltage of the floating node is determined by its neighbours and leakage currents. After some time an equilibrium is reached between these effects. Theoretical analysis and experimental evidence of this behaviour are presented.
dc.format.extent2 p.
dc.language.isoeng
dc.publisherInstitution of Electrical Engineers
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshMetal oxide semiconductors, Complementary
dc.subject.lcshCMOS integrated circuits
dc.titleImpact of gate tunnelling leakage on CMOS circuits with full open defects
dc.typeArticle
dc.subject.lemacCircuits integrats -- CMOS -- Disseny i construcció
dc.contributor.groupUniversitat Politècnica de Catalunya. QINE - Disseny de Baix Consum, Test, Verificació i Circuits Integrats de Seguretat
dc.identifier.doi10.1049/el:20072117
dc.description.peerreviewedPeer Reviewed
dc.description.awardwinningAward-winning
dc.relation.publisherversionhttp://ieeexplore.ieee.org/search/srchabstract.jsp?arnumber=4349252&isnumber=4349241&punumber=2220&k2dockey=4349252@ieejrns&query=%28%28arume%29%3Cin%3Emetadata+%29&pos=0
dc.rights.accessOpen Access
local.identifier.drac771634
dc.description.versionPostprint (published version)
local.citation.authorRodriguez, R.; Arumi, D.; Figueras, J.; Eichenberger, S.; Hora, C.; Kruseman, B.
local.citation.publicationNameElectronics Letters
local.citation.volume43
local.citation.numberIssue 21
local.citation.startingPage1140
local.citation.endingPage1141


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