Boron diffused emitters passivated with Al2O3 films
Tipo de documentoTexto en actas de congreso
Fecha de publicación2013
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condiciones de accesoAcceso restringido por política de la editorial
In this work we study the fabrication and characterization of boron diffused emitters using FZ c-Si(n) substrates. Emitter surface was passivated with Al2O3(25 nm thick) layers deposited by thermal atomic layer deposition ALD technique. This study covers a broad emitter sheet resistance Rsh range from 20 to 250 Ω/sq using both polished and textured wafers. Emitter electrical quality was tested by means of lifetime measurements using quasi-stationary photoconductance QSS-PC method. Dark saturation emitter current densities Joe's were extracted from lifetime measurements resulting in Joe's values ranging from 10 to 150 fA/cm2 depending on Rsh. These results are in the-state-of-the-art in boron emitter passivation.
CitaciónMasmitja, G. [et al.]. Boron diffused emitters passivated with Al2O3 films. A: Spanish Conference on Electron Devices. "Proceedings of the 2013 Spanish Conference on Electron Devices: CDE 2013: February 12-14, 2013: Valladolid, Spain". Valladolid: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 329-332.
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