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dc.contributor.authorBoronat Moreiro, Alfredo
dc.contributor.authorSilvestre Bergés, Santiago
dc.contributor.authorCastañer Muñoz, Luis María
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2013-06-04T12:52:37Z
dc.date.created2013
dc.date.issued2013
dc.identifier.citationBoronat, A.; Silvestre, S.; Castañer, L. Influence of hydrogen on the optical absorption response of GaAs(Ti) films deposited by R.F. sputtering. A: Spanish Conference on Electron Devices. "Proceedings of the 2013 Spanish Conference on Electron Devices: CDE 2013: February 12-14, 2013: Valladolid, Spain". Valladolid: Institute of Electrical and Electronics Engineers (IEEE), 2013, p. 357-360.
dc.identifier.isbn978-1-4673-4666-5
dc.identifier.urihttp://hdl.handle.net/2117/19501
dc.description.abstractIn the present work we have investigated the optical absorption behavior of GaAs(Ti) films deposited by r.f sputtering technique under different H2 partial pressures. In previous work we have already demonstrated the feasibility to obtain GaAs films with high dose of Ti, which we refer to as GaAs(Ti). Any absorption peak, which could be related with the presence of an intermediate band, has been identified. The low Etauc parameter together with a broad Urbach tail of the films make us to suspect that the possible presence of an absorption peak could be hidden. The incorporation of H2 on sputtered GaAs films have demonstrated before a shift of the Etauc parameter to higher values and a reduction of the Urbach tail.
dc.format.extent4 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica::Fotònica
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació::Telecomunicació òptica
dc.subject.lcshTemperature measurements
dc.subject.lcshPhotonics
dc.subject.otherGaAs(Ti) compound
dc.subject.otherhydrogen
dc.subject.otherintermediate band
dc.subject.othersputtering
dc.titleInfluence of hydrogen on the optical absorption response of GaAs(Ti) films deposited by R.F. sputtering
dc.typeConference report
dc.subject.lemacTermometria
dc.subject.lemacFotònica
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1109/CDE.2013.6481416
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?reload=true&arnumber=6481416&contentType=Conference+Publications
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac12464395
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
local.citation.authorBoronat, A.; Silvestre, S.; Castañer, L.
local.citation.contributorSpanish Conference on Electron Devices
local.citation.pubplaceValladolid
local.citation.publicationNameProceedings of the 2013 Spanish Conference on Electron Devices: CDE 2013: February 12-14, 2013: Valladolid, Spain
local.citation.startingPage357
local.citation.endingPage360


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