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dc.contributor.authorPonga, M.
dc.contributor.authorOrtiz, M.
dc.contributor.authorAriza, M.P.
dc.description.abstractIn this work we study the early onset of void growth by dislocation emission at finite temperature in single crystal of copper under uniaxial loading conditions using the HotQC method. The results provide a detailed characterization of the cavitation mechanism, including the geometry of the emitted dislocations, the dislocation reaction paths and attendant macroscopic quantities of interest such as the cavitation pressure. In addition, this work shows that as prismatic dislocation loops grow and move away from the void, the material surrounded by these loops is pushed away from the void surface, giving rise to a flux of material together with a heat flux through the crystal.
dc.format.extent13 p.
dc.subjectÀrees temàtiques de la UPC::Matemàtiques i estadística::Anàlisi numèrica::Mètodes en elements finits
dc.subject.lcshFinite element method
dc.subject.lcshCoupled problems (Complex systems) -- Numerical solutions
dc.subject.otherMultiscale modeling, Crystal plasticity, Thermomechanical coupling, Nanovoids, Dislocations
dc.titleCoupled thermoelastic simulation of nanovoid cavitation by dislocation emission at finite temperature
dc.typeConference report
dc.subject.lemacElements finits, Mètode dels
dc.rights.accessOpen Access
local.citation.contributorCOUPLED V
local.citation.publicationNameCOUPLED V : proceedings of the V International Conference on Computational Methods for Coupled Problems in Science and Engineering :

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