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dc.contributor.authorMuscato, O.
dc.contributor.authorCastiglione, T.
dc.contributor.authorCavallaro, C.
dc.date.accessioned2020-06-22T08:29:16Z
dc.date.available2020-06-22T08:29:16Z
dc.date.issued2015
dc.identifier.isbn978-84-943928-3-2
dc.identifier.urihttp://hdl.handle.net/2117/191279
dc.description.abstractIn this paper we investigate the electrostatics and charge transport in a triplegate Silicon Nanowire transistor. The quantum confinement in the transversal dimension of the wire have been tackled using the Schr¨odinger equation in the Effective Mass Approximation coupled to the Poisson equation. This system have been solved efficiently using a Variational Method. The charge transport along the longitudinal dimension of the wire has been considered using the semiclassical approximation, in the ballistic regime.
dc.format.extent11 p.
dc.language.isoeng
dc.publisherCIMNE
dc.subjectÀrees temàtiques de la UPC::Matemàtiques i estadística::Anàlisi numèrica::Mètodes en elements finits
dc.subject.lcshFinite element method
dc.subject.lcshCoupled problems (Complex systems) -- Numerical solutions
dc.subject.otherSilicon nanowires, Schr¨odinger-Poisson-Boltzmann system, VariationalMethod, ballistic transport
dc.titleBallistic charge transport in a triple-gate silicon nanowire transistor
dc.typeConference report
dc.subject.lemacElements finits, Mètode dels
dc.rights.accessOpen Access
local.citation.contributorCOUPLED VI
local.citation.publicationNameCOUPLED VI : proceedings of the VI International Conference on Computational Methods for Coupled Problems in Science and Engineering
local.citation.startingPage666
local.citation.endingPage676


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