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dc.contributor.authorMuscato, O.
dc.contributor.authorCastiglione, T.
dc.contributor.authorCavallaro, C.
dc.description.abstractIn this paper we investigate the electrostatics and charge transport in a triplegate Silicon Nanowire transistor. The quantum confinement in the transversal dimension of the wire have been tackled using the Schr¨odinger equation in the Effective Mass Approximation coupled to the Poisson equation. This system have been solved efficiently using a Variational Method. The charge transport along the longitudinal dimension of the wire has been considered using the semiclassical approximation, in the ballistic regime.
dc.format.extent11 p.
dc.subjectÀrees temàtiques de la UPC::Matemàtiques i estadística::Anàlisi numèrica::Mètodes en elements finits
dc.subject.lcshFinite element method
dc.subject.lcshCoupled problems (Complex systems) -- Numerical solutions
dc.subject.otherSilicon nanowires, Schr¨odinger-Poisson-Boltzmann system, VariationalMethod, ballistic transport
dc.titleBallistic charge transport in a triple-gate silicon nanowire transistor
dc.typeConference report
dc.subject.lemacElements finits, Mètode dels
dc.rights.accessOpen Access
local.citation.contributorCOUPLED VI
local.citation.publicationNameCOUPLED VI : proceedings of the VI International Conference on Computational Methods for Coupled Problems in Science and Engineering

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