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Ballistic charge transport in a triple-gate silicon nanowire transistor
| dc.contributor.author | Muscato, O. |
| dc.contributor.author | Castiglione, T. |
| dc.contributor.author | Cavallaro, C. |
| dc.date.accessioned | 2020-06-22T08:29:16Z |
| dc.date.available | 2020-06-22T08:29:16Z |
| dc.date.issued | 2015 |
| dc.identifier.isbn | 978-84-943928-3-2 |
| dc.identifier.uri | http://hdl.handle.net/2117/191279 |
| dc.description.abstract | In this paper we investigate the electrostatics and charge transport in a triplegate Silicon Nanowire transistor. The quantum confinement in the transversal dimension of the wire have been tackled using the Schr¨odinger equation in the Effective Mass Approximation coupled to the Poisson equation. This system have been solved efficiently using a Variational Method. The charge transport along the longitudinal dimension of the wire has been considered using the semiclassical approximation, in the ballistic regime. |
| dc.format.extent | 11 p. |
| dc.language.iso | eng |
| dc.publisher | CIMNE |
| dc.subject | Àrees temàtiques de la UPC::Matemàtiques i estadística::Anàlisi numèrica::Mètodes en elements finits |
| dc.subject.lcsh | Finite element method |
| dc.subject.lcsh | Coupled problems (Complex systems) -- Numerical solutions |
| dc.subject.other | Silicon nanowires, Schr¨odinger-Poisson-Boltzmann system, VariationalMethod, ballistic transport |
| dc.title | Ballistic charge transport in a triple-gate silicon nanowire transistor |
| dc.type | Conference report |
| dc.subject.lemac | Elements finits, Mètode dels |
| dc.rights.access | Open Access |
| local.citation.contributor | COUPLED VI |
| local.citation.publicationName | COUPLED VI : proceedings of the VI International Conference on Computational Methods for Coupled Problems in Science and Engineering |
| local.citation.startingPage | 666 |
| local.citation.endingPage | 676 |
