Vanadium Pentoxide as a hole selective contact for novel heterojunction solar cells based on n-type silicon
Tipus de documentTreball d'assignatura
Data publicació2016
Curs acadèmic2015/2016
EditorUniversitat Politècnica de Catalunya
AssignaturaPROJECTES D'ENGINYERIA FÍSICA 2 - 230477
Condicions d'accésAccés obert
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Reconeixement-NoComercial-SenseObraDerivada 3.0 Espanya
Abstract
This work reports on the use of vanadium pentoxide as a low-temperature alternative to conventional
p-doped emitters for silicon solar cells based on n-type wafers. Vanadium pentoxide is a
transition metal oxide, whose semiconducting properties are determined by oxygen-vacancies created
during the deposition process. Due to its high work-function (> 5 eV) and wide energy band gap
(> 3 eV), this transition metal oxide acts as a transparent front-side hole-selective contact. On the
rear side of the n-type wafer, two different passivated back contact strategies were compared. The
first one uses locally-diffused point-contacts created by laser-firing, whereas the second is based on
the heterojunction with intrinsic thin layer concept. Of both rear contact types, the heterojunction
performed the best with a conversion efficiency of 14.8%. These results bring into view a new silicon
heterojunction solar cell concept with advantages, such as the elimination of toxic dopant gases and
a more simple low-temperature fabrication process.
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pef2martin-ros-perea.pdf | Vanadium Pentoxide as a hole selective contact for novel heterojunction solar cells based on n-type silicon | 345,9Kb | Visualitza/Obre |