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Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch
dc.contributor.author | Heredia, F.-Javier (Francisco Javier) |
dc.contributor.author | Ribó Pal, Miquel |
dc.contributor.author | Pradell i Cara, Lluís |
dc.contributor.author | Wipf, Selin Tolunay |
dc.contributor.author | Göritz, Alexander |
dc.contributor.author | Wietstruck, Matthias |
dc.contributor.author | Wipf, Christian |
dc.contributor.author | Kaynak, Mehmet |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Estadística i Investigació Operativa |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions |
dc.date.accessioned | 2020-05-05T08:10:24Z |
dc.date.available | 2020-05-05T08:10:24Z |
dc.date.issued | 2019-10-01 |
dc.identifier.citation | Heredia, J. [et al.]. Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch. "Micromachines", 1 Octubre 2019, vol. 10, núm. 10, p. 632: 1-632: 13. |
dc.identifier.issn | 2072-666X |
dc.identifier.uri | http://hdl.handle.net/2117/186284 |
dc.description.abstract | A 120–140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. A systematic design procedure is applied to obtain a perfectly balanced gain and noise figure in both frequency states (120 GHz and 140 GHz). The measured gain and noise figure are 14.2/14.2 dB and 8.2/8.2 dB at 120/140 GHz respectively, in very good agreement with circuit/electromagnetic co-simulations. The LNA chip and core areas are 0.197 mm2 and 0.091 mm2, respectively, which supposes an area reduction of 23.4% and 15.2% compared to other LNAs reported in this frequency band. The experimental results validate the design procedure and its analysis |
dc.language.iso | eng |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Spain |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/es/ |
dc.subject | Àrees temàtiques de la UPC::Matemàtiques i estadística |
dc.subject.other | Low-noise amplifier (LNA) |
dc.subject.other | Frequency-reconfigurable LNA |
dc.subject.other | Multimodal circuit |
dc.subject.other | SiGe BiCMOS |
dc.subject.other | Hetero junction bipolar transistor (HBT) |
dc.subject.other | RF switch |
dc.title | Miniature switchable millimeter-wave BiCMOS low-noise amplifier at 120/140 GHz using an HBT switch |
dc.type | Article |
dc.contributor.group | Universitat Politècnica de Catalunya. GNOM - Grup d'Optimització Numèrica i Modelització |
dc.contributor.group | Universitat Politècnica de Catalunya. RF&MW - Grup de Recerca de sistemes, dispositius i materials de RF i microones |
dc.identifier.doi | 10.3390/mi10100632 |
dc.description.peerreviewed | Peer Reviewed |
dc.subject.ams | Classificació AMS::74 Mechanics of deformable solids |
dc.relation.publisherversion | https://www.mdpi.com/2072-666X/10/10/632 |
dc.rights.access | Open Access |
local.identifier.drac | 26749018 |
dc.description.version | Postprint (published version) |
local.citation.author | Heredia, Julio; Ribó Pal, Miquel; Pradell, L.; Wipf, S.; Göritz, A.; Wietstruck, M.; Wipf, C.; Kaynak, M. |
local.citation.publicationName | Micromachines |
local.citation.volume | 10 |
local.citation.number | 10 |
local.citation.startingPage | 632: 1 |
local.citation.endingPage | 632: 13 |
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