Show simple item record

dc.contributor.authorGarcía Pastor, David
dc.contributor.authorCollado Gómez, Juan Carlos
dc.contributor.authorMateu Mateu, Jordi
dc.contributor.authorAigner, Robert
dc.contributor.otherUniversitat Politècnica de Catalunya. Doctorat en Teoria del Senyal i Comunicacions
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.identifier.citationGarcia, D. [et al.]. Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators. A: IEEE International Ultrasonics Symposium. "2019 IEEE International Ultrasonics Symposium (IUS)". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 76-79.
dc.description.abstractThis work applies a comprehensive nonlinear characterization process of two Temperature Compensated Bulk Acoustic Wave (TC-BAW) resonators. In both resonators, the SiO 2 layers have a remarkable impact on the generation of third- order intermodulation products (IMD3), confirming the impact of the SiO 2 on the generation of passive intermodulation. A unified model considering the electro-thermo-mechanical constitutive relations of the piezoelectricity is used, that allows to discern on the origin of the IMD3, either it comes from intrinsic nonlinearities of the materials, or from self-heating mechanisms.
dc.description.sponsorshipThis work was supported in part through grants TEC2017-84817-C2-2-R, TEC2017-88343-C4-2-R and 2017 SGR 813. With the support of the Universities and Research Secretary of the Generalitat de Catalunya and the European Social Fund through grant 2018FI_B_00448
dc.format.extent4 p.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació
dc.subject.lcshDielectric resonators
dc.subject.otherResonant frequency
dc.subject.otherTemperature measurement
dc.subject.otherAluminum nitride
dc.subject.otherMathematical model
dc.subject.otherIII-V semiconductor materials
dc.titleRole of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators
dc.typeConference report
dc.subject.lemacRessonadors dielèctrics
dc.contributor.groupUniversitat Politècnica de Catalunya. CSC - Components and Systems for Communications Research Group
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.description.versionPostprint (published version)
local.citation.authorGarcia, D.; Collado, J.; Mateu, J.; Aigner, R.
local.citation.contributorIEEE International Ultrasonics Symposium
local.citation.publicationName2019 IEEE International Ultrasonics Symposium (IUS)

Files in this item


This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder