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dc.contributor.authorGarcía Pastor, David
dc.contributor.authorCollado Gómez, Juan Carlos
dc.contributor.authorMateu Mateu, Jordi
dc.contributor.authorAigner, Robert
dc.contributor.otherUniversitat Politècnica de Catalunya. Doctorat en Teoria del Senyal i Comunicacions
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Teoria del Senyal i Comunicacions
dc.date.accessioned2020-04-30T06:47:21Z
dc.date.issued2019
dc.identifier.citationGarcia, D. [et al.]. Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators. A: IEEE International Ultrasonics Symposium. "2019 IEEE International Ultrasonics Symposium (IUS)". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 76-79.
dc.identifier.isbn9781728145969
dc.identifier.urihttp://hdl.handle.net/2117/185866
dc.description.abstractThis work applies a comprehensive nonlinear characterization process of two Temperature Compensated Bulk Acoustic Wave (TC-BAW) resonators. In both resonators, the SiO 2 layers have a remarkable impact on the generation of third- order intermodulation products (IMD3), confirming the impact of the SiO 2 on the generation of passive intermodulation. A unified model considering the electro-thermo-mechanical constitutive relations of the piezoelectricity is used, that allows to discern on the origin of the IMD3, either it comes from intrinsic nonlinearities of the materials, or from self-heating mechanisms.
dc.description.sponsorshipThis work was supported in part through grants TEC2017-84817-C2-2-R, TEC2017-88343-C4-2-R and 2017 SGR 813. With the support of the Universities and Research Secretary of the Generalitat de Catalunya and the European Social Fund through grant 2018FI_B_00448
dc.format.extent4 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Enginyeria de la telecomunicació
dc.subject.lcshDielectric resonators
dc.subject.otherResonators
dc.subject.otherResonant frequency
dc.subject.otherTemperature measurement
dc.subject.otherAluminum nitride
dc.subject.otherMathematical model
dc.subject.otherAcoustics
dc.subject.otherIII-V semiconductor materials
dc.titleRole of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators
dc.typeConference report
dc.subject.lemacRessonadors dielèctrics
dc.contributor.groupUniversitat Politècnica de Catalunya. CSC - Components and Systems for Communications Research Group
dc.identifier.doi10.1109/ULTSYM.2019.8925546
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://ieeexplore-ieee-org.recursos.biblioteca.upc.edu/abstract/document/8925546
dc.rights.accessRestricted access - publisher's policy
local.identifier.drac26245146
dc.description.versionPostprint (published version)
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO/FEDER/TEC2017/84817-C2-2-R
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO/FEDER/TEC2017/88343-C4-2-R
dc.relation.projectidinfo:eu-repo/grantAgreement/GENCAT/AGAUR/2017/SGR813
dc.relation.projectidinfo:eu-repo/grantAgreement/GENCAT/2018FI_B_00448
dc.date.lift10000-01-01
local.citation.authorGarcia, D.; Collado, J.; Mateu, J.; Aigner, R.
local.citation.contributorIEEE International Ultrasonics Symposium
local.citation.publicationName2019 IEEE International Ultrasonics Symposium (IUS)
local.citation.startingPage76
local.citation.endingPage79


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