Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators

This work applies a comprehensive nonlinear characterization process of two Temperature Compensated Bulk Acoustic Wave (TC-BAW) resonators. In both resonators, the SiO 2 layers have a remarkable impact on the generation of third- order intermodulation products (IMD3), confirming the impact of the SiO 2 on the generation of passive intermodulation. A unified model considering the electro-thermo-mechanical constitutive relations of the piezoelectricity is used, that allows to discern on the origin of the IMD3, either it comes from intrinsic nonlinearities of the materials, or from self-heating mechanisms.

CitationGarcia, D. [et al.]. Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators. A: IEEE International Ultrasonics Symposium. "2019 IEEE International Ultrasonics Symposium (IUS)". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 76-79.

URIhttp://hdl.handle.net/2117/185866

DOI10.1109/ULTSYM.2019.8925546

ISBN9781728145969

Publisher versionhttps://ieeexplore-ieee-org.recursos.biblioteca.upc.edu/abstract/document/8925546

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Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators

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