Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators
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hdl:2117/185866
Document typeConference report
Defense date2019
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
Abstract
This work applies a comprehensive nonlinear characterization process of two Temperature Compensated Bulk Acoustic Wave (TC-BAW) resonators. In both resonators, the SiO 2 layers have a remarkable impact on the generation of third- order intermodulation products (IMD3), confirming the impact of the SiO 2 on the generation of passive intermodulation. A unified model considering the electro-thermo-mechanical constitutive relations of the piezoelectricity is used, that allows to discern on the origin of the IMD3, either it comes from intrinsic nonlinearities of the materials, or from self-heating mechanisms.
CitationGarcia, D. [et al.]. Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators. A: IEEE International Ultrasonics Symposium. "2019 IEEE International Ultrasonics Symposium (IUS)". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 76-79.
ISBN9781728145969
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