Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators

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García Pastor, DavidMés informació
Collado Gómez, Juan CarlosMés informacióMés informacióMés informació
Mateu Mateu, JordiMés informacióMés informacióMés informació
Aigner, Robert
Document typeConference report
Defense date2019
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder
ProjectSENSORES GRAVIMETRICOS DE GASES BASADOS EN RESONADORES ELECTRO-ACUSTICOS DE ALN PARA APLICACIONES EN TEMPERATURAS EXTREMAS (AEI-TEC2017-84817-C2-2-R)
Abstract
CitationGarcia, D. [et al.]. Role of SiO2 layers in third-order nonlinear effects of temperature compensated BAW resonators. A: IEEE International Ultrasonics Symposium. "2019 IEEE International Ultrasonics Symposium (IUS)". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 76-79. 
URIhttp://hdl.handle.net/2117/185866
DOI10.1109/ULTSYM.2019.8925546
ISBN9781728145969
Publisher versionhttps://ieeexplore-ieee-org.recursos.biblioteca.upc.edu/abstract/document/8925546
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