Analysis of border ring modes on SMR-BAW resonators
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hdl:2117/185863
Document typeConference lecture
Defense date2019
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessRestricted access - publisher's policy
Abstract
An equivalent circuit model is proposed in order to model the Border Ring (BR) spurious modes on Type I Solidly Mounted Resonators (SMR) BAW resonators and the cancellation of the in-band lateral modes that the BR frame produces. The model has been validated through FEM simulations and with measurements of resonators. It predicts the electrical response of the BR effects for different resonators and BR sizes.
CitationUdaondo, C. [et al.]. Analysis of border ring modes on SMR-BAW resonators. A: IEEE International Ultrasonics Symposium. "2019 IEEE International Ultrasonics Symposium (IUS)". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 1703-1706.
ISBN9781728145969
Publisher versionhttps://ieeexplore.ieee.org/abstract/document/8925601
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