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Noise-induced Performance Enhancement of Variability-aware Memristor Networks
(2019)
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Memristor networks are capable of low-power, massive parallel processing and information storage. Moreover, they have widely used for a vast number of intelligent data analysis applications targeting mobile edge devices ...
Probabilistic resistive switching device modeling based on Markov jump processes
(Institute of Electrical and Electronics Engineers (IEEE), 2020-12-02)
Article.
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Article.
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In this work, a versatile mathematical framework for multi-state probabilistic modeling of Resistive Switching (RS) devices is proposed for the first time. The mathematical formulation of memristor and Markov jump processes ...
Experimental investigation of memristance enhancement
(2019)
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Memristor devices are two-terminal nanoscale circuit elements that exhibit nonvolatile information storing and can be manufactured in ultra-dense arrays with low-power operation. Although, theoretically, memristors are ...
Plasma modified silicon nitride resistive switching memories
(2019)
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In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching ...
Effect of lattice defects on the transport properties of graphene nanoribbon
(2019)
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Graphene nanoribbons are the most emerging graphene structures for electronic applications. Here, we present our calculation results on the impact of lattice defects on the transport properties of these structures. Preliminary ...
Electronic properties of graphene nanoribbons with defects
(2021-01-27)
Article.
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Article.
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Graphene nanoribbons (GNRs) are the most important emerging Graphene structures for nanoelectronic and sensor applications. GNRs with perfect lattices have been extensively studied, but fabricated GNRs contain lattice ...
Power-efficient noise-Induced reduction of ReRAM cell’s temporal variability effects
(2021-04)
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Article.
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Resistive Random Access Memory (ReRAM) is apromising novel memory technology for non-volatile storing,
with low-power operation and ultra-high area density. However,
ReRAM memories still face issues through commerciali ...
Future and emergent materials and devices for resistive switching
(2018)
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During the last years, Resistive Random-Access Memories (ReRAMs or RRAMs) stimulated growing attention as promising non-volatile (NV) candidate memories to surpass existing storage devices while exhibiting excellent ...