A novel variation-tolerant 4T-DRAM cell with enhanced soft-error tolerance
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hdl:2117/18176
Tipo de documentoTexto en actas de congreso
Fecha de publicación2012
EditorIEEE Computer Society Publications
Condiciones de accesoAcceso restringido por política de la editorial
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Resumen
In view of device scaling issues, embedded DRAM (eDRAM)
technology is being considered as a strong alternative to conventional
SRAM for use in on-chip memories. Memory cells designed using eDRAM
technology in addition to being logic-compatible, are variation tolerant
and immune to noise present at low supply voltages. However, two major
causes of concern are the data retention capability which is worsened by
parameter variations leading to frequent data refreshes (resulting in large
dynamic power overhead) and the transient reduction of stored charge
increasing soft-error (SE) susceptibility. In this paper, we present a novel
variation-tolerant 4T-DRAM cell whose power consumption is 20.4%
lower when compared to a similar sized eDRAM cell. The retention time
on-average is improved by 2.04X while incurring a delay overhead of
3% on the read-access time. Most importantly, using a soft-error (SE)
rate analysis tool, we have confirmed that the cell sensitivity to SEs is
reduced by 56% on-average in a natural working environment
CitaciónGanapathy, S. [et al.]. A novel variation-tolerant 4T-DRAM cell with enhanced soft-error tolerance. A: IEEE International Conference on Computer Design: VLSI in Computers and Processors. "2012 IEEE 30th International Conference on Computer Design (ICCD)". Montreal: IEEE Computer Society Publications, 2012, p. 472-477.
ISBN978-1-4673-3050-3
Colecciones
- HIPICS - High Performance Integrated Circuits and Systems - Ponències/Comunicacions de congressos [144]
- ARCO - Microarquitectura i Compiladors - Ponències/Comunicacions de congressos [178]
- Departament d'Arquitectura de Computadors - Ponències/Comunicacions de congressos [1.848]
- Departament d'Enginyeria Electrònica - Ponències/Comunicacions de congressos [1.644]
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