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dc.contributor.authorAltet Sanahujes, Josep
dc.contributor.authorMateo Peña, Diego
dc.contributor.authorGómez Salinas, Dídac
dc.contributor.authorPerpiñà, Xavier
dc.contributor.authorJordà, Xavier
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.identifier.citationAltet, J. [et al.]. DC temperature measurements for power gain monitoring in RF power amplifiers. A: IEEE International Test Conference. "2012 IEEE International Test Conference (ITC)". Anaheim, CA: IEEE, 2012, p. 1-8.
dc.description.abstractIn this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.
dc.format.extent8 p.
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
dc.subject.lcshPower amplifiers
dc.titleDC temperature measurements for power gain monitoring in RF power amplifiers
dc.typeConference report
dc.subject.lemacAmplificadors de potència
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.description.versionPostprint (published version)
local.citation.authorAltet, J.; Mateo, D.; Gómez, D.; Perpiñà, X.; Jordà, X.
local.citation.contributorIEEE International Test Conference
local.citation.pubplaceAnaheim, CA
local.citation.publicationName2012 IEEE International Test Conference (ITC)

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