DC temperature measurements for power gain monitoring in RF power amplifiers

Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac; Perpiñà, Xavier; Jordà, Xavier

doi:10.1109/TEST.2012.6401589

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Altet Sanahujes, Josep

Document typeConference report

Defense date2012

PublisherIEEE

Rights accessRestricted access - publisher's policy

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder

Abstract

In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.

CitationAltet, J. [et al.]. DC temperature measurements for power gain monitoring in RF power amplifiers. A: IEEE International Test Conference. "2012 IEEE International Test Conference (ITC)". Anaheim, CA: IEEE, 2012, p. 1-8.

URIhttp://hdl.handle.net/2117/17832

DOI10.1109/TEST.2012.6401589

ISBN978-1-4577-0152-8/

Publisher versionhttp://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=6401589&url=http%3A%2F%2Fieeexplore.ieee.org%2Fxpls%2Fabs_all.jsp%3Farnumber%3D6401589

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