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Solution-growth and optoelectronic properties of ZnO:Cl@ZnS core-shell nanowires with tunable shell thickness
dc.contributor.author | Fan, Jiandong |
dc.contributor.author | Fábrega, Cristian |
dc.contributor.author | Zamani, Reza |
dc.contributor.author | Shavel, Alexey |
dc.contributor.author | Güell, Frank |
dc.contributor.author | Carrete, Alex |
dc.contributor.author | Andreu, Teresa |
dc.contributor.author | López Martínez, Antonio Miguel |
dc.contributor.author | Morante Lleonart, Joan Ramon |
dc.contributor.author | Arbiol, Jordi |
dc.contributor.author | Cabota, Andreu |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.date.accessioned | 2013-02-12T11:47:27Z |
dc.date.created | 2013-04-05 |
dc.date.issued | 2013-04-05 |
dc.identifier.citation | Fan, J. [et al.]. Solution-growth and optoelectronic properties of ZnO:Cl@ZnS core-shell nanowires with tunable shell thickness. "Journal of alloys and compounds", 05 Abril 2013, vol. 555, p. 213-218. |
dc.identifier.issn | 0925-8388 |
dc.identifier.uri | http://hdl.handle.net/2117/17649 |
dc.description.abstract | Arrays of vertically aligned ZnO:Cl@ZnS core–shell nanowires (NWs) were grown by a facile low-cost, high-yield and seed-free two-step process. These NWs were used to demonstrate the potential of 3D electrodes based on core–shell heterostructures to enhance charge carrier separation and transfer. With this goal in mind, the photocurrent density of ZnO:Cl@ZnS NWs was characterized as a function of the shell thickness. Although no significant variations in the absorption and photoluminescence spectra were found with the presence of the shell, the photocurrent measured from the core–shell NWs was highly enhanced with respect to bare ZnO:Cl NWs. These photocurrent variations are associated with the control of the band bending in the core–shell NW surface, which modifies the efficiency of charge carrier transfer between the NW and the electrolyte. |
dc.format.extent | 6 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Enginyeria electrònica::Optoelectrònica::Dispositius fotoelèctrics |
dc.subject.lcsh | Nanostructured materials--Electric properties |
dc.subject.lcsh | Photoconductivity |
dc.subject.lcsh | Photovoltaic power generation |
dc.subject.lcsh | Luminescence |
dc.title | Solution-growth and optoelectronic properties of ZnO:Cl@ZnS core-shell nanowires with tunable shell thickness |
dc.type | Article |
dc.subject.lemac | Materials nanoestructurals |
dc.subject.lemac | Luminiscència |
dc.subject.lemac | Elèctrodes |
dc.subject.lemac | Fotoconducció |
dc.subject.lemac | Nanoestructures -- Propietats òptiques |
dc.subject.lemac | Dispositius optoelectrònics |
dc.contributor.group | Universitat Politècnica de Catalunya. INSIDE - Innovació en Sistemes per al Disseny i la Formació a l'Enginyeria |
dc.identifier.doi | 10.1016/j.jallcom.2012.11.166 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | http://www.sciencedirect.com/science/article/pii/S0925838812021822 |
dc.rights.access | Restricted access - publisher's policy |
local.identifier.drac | 11156116 |
dc.description.version | Postprint (published version) |
dc.date.lift | 10000-01-01 |
local.citation.author | Fan, J.; Fábrega, C.; Zamani, R.; Shavel, A.; Güell, F.; Carrete, A.; Andreu, T.; Lopez, A.; Morante, J.; Arbiol, J.; Cabota, A. |
local.citation.publicationName | Journal of alloys and compounds |
local.citation.volume | 555 |
local.citation.startingPage | 213 |
local.citation.endingPage | 218 |
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