Impact of laser attacks on the switching behavior of RRAM devices
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The ubiquitous use of critical and private data in electronic format requires reliable and secure embedded systems for IoT devices. In this context, RRAMs (Resistive Random Access Memories) arises as a promising alternative to replace current memory technologies. However, their suitability for this kind of application, where the integrity of the data is crucial, is still under study. Among the different typology of attacks to recover information of secret data, laser attack is one of the most common due to its simplicity. Some preliminary works have already addressed the influence of laser tests on RRAM devices. Nevertheless, the results are not conclusive since different responses have been reported depending on the circuit under testing and the features of the test. In this paper, we have conducted laser tests on individual RRAM devices. For the set of experiments conducted, the devices did not show faulty behaviors. These results contribute to the characterization of RRAMs and, together with the rest of related works, are expected to pave the way for the development of suitable countermeasures against external attacks.
CitationArumi, D. [et al.]. Impact of laser attacks on the switching behavior of RRAM devices. "Electronics", 20 Gener 2020, vol. 9, núm. 1, p. 1-9.