dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
dc.contributor.author | Garín, Moisés |
dc.contributor.author | von Gastrow, Guillaume |
dc.contributor.author | Carrió Díaz, David |
dc.contributor.author | Alcubilla González, Ramón |
dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
dc.contributor.other | Universitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica |
dc.date.accessioned | 2020-01-27T16:38:00Z |
dc.date.available | 2020-12-11T01:32:14Z |
dc.date.issued | 2019-01-01 |
dc.identifier.citation | Ortega, P. [et al.]. Black silicon back-contact module with wide light acceptance angle. "Progress in photovoltaics", 1 Gener 2019, p. 1-7. |
dc.identifier.issn | 1062-7995 |
dc.identifier.uri | http://hdl.handle.net/2117/175836 |
dc.description | This is the peer reviewed version of the following article: Ortega, P, Garín, M, von Gastrow, G, et al. Black silicon back‐contact module with wide light acceptance angle. Prog Photovolt Res Appl. 2019; 1– 7, which has been published in final form at https://doi.org/10.1002/pip.3231. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving |
dc.description.abstract | In this work, a photovoltaic mini-module combining interdigitated back-contacted solar cells with black silicon in the front was implemented as a proof of concept. The module consists of nine solar cells connected in series with an active area of 86.5 cm2. Both the assembly and panel encapsulation were made using industrial back-contact module technology. Noticeable photovoltaic efficiencies of 18.1% and 19.9% of the whole module and the best individual cell of the module, respectively, demonstrate that fragile nanostructures can withstand standard module fabrication stages. Open-circuit voltage and fill factor values of 5.76 V and 81.6%, respectively, reveal that series interconnection between cells works as expected, confirming a good ohmic contact between cell busbars and the conductive backsheet. Additionally, the excellent quasi-omnidirectional antireflection properties of black silicon surfaces prevail at module level, as it is corroborated by light incidence angle dependence measurements of the short-circuit current parameter. |
dc.format.extent | 7 p. |
dc.language.iso | eng |
dc.subject | Àrees temàtiques de la UPC::Energies::Energia solar fotovoltaica |
dc.subject.lcsh | Photovoltaic power generation |
dc.subject.other | Black silicon |
dc.subject.other | Encapsulation |
dc.subject.other | Interdigitated back-contact solar cell |
dc.subject.other | Module |
dc.subject.other | Surface passivation |
dc.title | Black silicon back-contact module with wide light acceptance angle |
dc.type | Article |
dc.subject.lemac | Energia solar fotovoltaica |
dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
dc.identifier.doi | 10.1002/pip.3231 |
dc.description.peerreviewed | Peer Reviewed |
dc.relation.publisherversion | https://onlinelibrary.wiley.com/doi/abs/10.1002/pip.3231 |
dc.rights.access | Open Access |
local.identifier.drac | 26538068 |
dc.description.version | Postprint (author's final draft) |
dc.relation.projectid | info:eu-repo/grantAgreement/MINECO//ENE2015-74009-JIN/ES/HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA./ |
dc.relation.projectid | info:eu-repo/grantAgreement/MINECO//ENE2015-74009-JIN/ES/HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA./ |
local.citation.author | Ortega, P.; Garín, M.; von Gastrow, G.; Carrió, D.; Alcubilla, R. |
local.citation.publicationName | Progress in photovoltaics |
local.citation.startingPage | 1 |
local.citation.endingPage | 7 |