Show simple item record

dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorGarín, Moisés
dc.contributor.authorvon Gastrow, Guillaume
dc.contributor.authorCarrió Díaz, David
dc.contributor.authorAlcubilla González, Ramón
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.contributor.otherUniversitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica
dc.date.accessioned2020-01-27T16:38:00Z
dc.date.available2020-12-11T01:32:14Z
dc.date.issued2019-01-01
dc.identifier.citationOrtega, P. [et al.]. Black silicon back-contact module with wide light acceptance angle. "Progress in photovoltaics", 1 Gener 2019, p. 1-7.
dc.identifier.issn1062-7995
dc.identifier.urihttp://hdl.handle.net/2117/175836
dc.descriptionThis is the peer reviewed version of the following article: Ortega, P, Garín, M, von Gastrow, G, et al. Black silicon back‐contact module with wide light acceptance angle. Prog Photovolt Res Appl. 2019; 1– 7, which has been published in final form at https://doi.org/10.1002/pip.3231. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Self-Archiving
dc.description.abstractIn this work, a photovoltaic mini-module combining interdigitated back-contacted solar cells with black silicon in the front was implemented as a proof of concept. The module consists of nine solar cells connected in series with an active area of 86.5 cm2. Both the assembly and panel encapsulation were made using industrial back-contact module technology. Noticeable photovoltaic efficiencies of 18.1% and 19.9% of the whole module and the best individual cell of the module, respectively, demonstrate that fragile nanostructures can withstand standard module fabrication stages. Open-circuit voltage and fill factor values of 5.76 V and 81.6%, respectively, reveal that series interconnection between cells works as expected, confirming a good ohmic contact between cell busbars and the conductive backsheet. Additionally, the excellent quasi-omnidirectional antireflection properties of black silicon surfaces prevail at module level, as it is corroborated by light incidence angle dependence measurements of the short-circuit current parameter.
dc.format.extent7 p.
dc.language.isoeng
dc.subjectÀrees temàtiques de la UPC::Energies::Energia solar fotovoltaica
dc.subject.lcshPhotovoltaic power generation
dc.subject.otherBlack silicon
dc.subject.otherEncapsulation
dc.subject.otherInterdigitated back-contact solar cell
dc.subject.otherModule
dc.subject.otherSurface passivation
dc.titleBlack silicon back-contact module with wide light acceptance angle
dc.typeArticle
dc.subject.lemacEnergia solar fotovoltaica
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.identifier.doi10.1002/pip.3231
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://onlinelibrary.wiley.com/doi/abs/10.1002/pip.3231
dc.rights.accessOpen Access
local.identifier.drac26538068
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO//ENE2015-74009-JIN/ES/HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA./
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO//ENE2015-74009-JIN/ES/HACIA LA OBTENCION DE MULTIPLES CELULAS MONOCRISTALINAS DE SILICIO CON 20% DE EFICIENCIA Y MENOS DE 20 µM DE GROSOR A PARTIR DE UNA UNICA OBLEA./
local.citation.authorOrtega, P.; Garín, M.; von Gastrow, G.; Carrió, D.; Alcubilla, R.
local.citation.publicationNameProgress in photovoltaics
local.citation.startingPage1
local.citation.endingPage7


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record