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dc.contributor.authorFerrer Arnau, Luis Jorge
dc.contributor.authorBerbel Artal, Néstor
dc.contributor.authorCapellá Frau, Gabriel José
dc.contributor.authorZaragoza Bertomeu, Jordi
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2020-01-27T13:59:48Z
dc.date.available2020-01-27T13:59:48Z
dc.date.issued2019
dc.identifier.citationFerrer-Arnau, L. [et al.]. Study of modulation techniques applied to full bridge single-phase inverters based on wide-bandgap semiconductors. A: Annual Conference of the IEEE Industrial Electronics Society. "IECON 2019: 45th Annual Conferenceof the IEEE Industrial Electronics Society: Convention Center, Lisbon, Portugal: 14-17 October, 2019". 2019, p. 2032-2037.
dc.identifier.isbn978-1-7281-4878-6
dc.identifier.urihttp://hdl.handle.net/2117/175800
dc.description.abstractWide-band gap (WBG) devices are gradually replacing standard Si semiconductors in power converters. This is due to the fact that WBG devices exhibit lower capacitance and on-resistance and besides, as they can switch at much higher frequencies, high-quality output voltage can be achieved. Additional improvements can be obtained by using new modulation techniques. In this paper, four modulation techniques (Bipolar, Unipolar, Discontinuous 1P and Discontinuous 2P) have been studied. All of them have been implemented on a WBG-based full-bridge single-phase inverter. In order to assess the output voltage quality, Total Harmonic Distortion (THD) and Weighted Total Harmonic Distortion (WTHD) have been computed. Overall power losses and Common Mode Voltage (CMV) have been computed too. In terms of output voltage quality, better results are obtained with either unipolar or any of the discontinuous modulation techniques. Discontinuous techniques show also excellent results as for power losses. The best CMV results are obtained with bipolar modulation.
dc.format.extent6 p.
dc.language.isoeng
dc.rightsAttribution 3.0 Spain
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica
dc.subject.lcshSwitching circuits
dc.subject.lcshModulation (Electronics)
dc.subject.lcshHarmonic analysis
dc.subject.otherGaN
dc.subject.othermodulation techniques
dc.subject.othervoltage quality
dc.subject.otherefficiency
dc.subject.otherpower inverter
dc.titleStudy of modulation techniques applied to full bridge single-phase inverters based on wide-bandgap semiconductors
dc.typeConference lecture
dc.subject.lemacCircuits de commutació
dc.subject.lemacModulació (Electrònica)
dc.subject.lemacAnàlisi harmònica
dc.contributor.groupUniversitat Politècnica de Catalunya. (TIEG) - Terrassa Industrial Electronics Group
dc.identifier.doi10.1109/IECON.2019.8927267
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
local.identifier.drac26550133
dc.description.versionPostprint (author's final draft)
local.citation.authorFerrer-Arnau, Ll.; Berbel, N.; Capella, G.; Zaragoza, J.
local.citation.contributorAnnual Conference of the IEEE Industrial Electronics Society
local.citation.publicationNameIECON 2019: 45th Annual Conferenceof the IEEE Industrial Electronics Society: Convention Center, Lisbon, Portugal: 14-17 October, 2019
local.citation.startingPage2032
local.citation.endingPage2037


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Attribution 3.0 Spain
Except where otherwise noted, content on this work is licensed under a Creative Commons license : Attribution 3.0 Spain