Beam-combining scheme of high-power broad-area semiconductor lasers with Lyot-filtered reinjection: modeling, simulations, and experiments
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A brightness- and power-scalable polarization beam-combining scheme for high-power, broad-area semiconduc-tor laser diodes is investigated numerically and experimentally. To achieve the beam combining, we employ Lyot-filtered optical reinjection from an external cavity, which forces lasing of the individual diodes on interleavedfrequency combs with overlapping envelopes and enables a high optical coupling efficiency. Unlike conventionalspectral beam-combining schemes with diffraction gratings, the optical coupling efficiency is insensitive to ther-mal drifts of laser wavelengths. This scheme can be used for efficient coupling of a large number of laser diodesand paves the way toward using broad-area laser diode arrays for cost-efficient material processing, which requireshigh-brilliance emission and optical powers in the kW regime.
CitationBrée, C. [et al.]. Beam-combining scheme of high-power broad-area semiconductor lasers with Lyot-filtered reinjection: modeling, simulations, and experiments. "Journal of the Optical Society of America B. Optical physics", 1 Juliol 2019, vol. 36, núm. 7, p. 1721-1730.