Show simple item record

dc.contributor.authorRos Costals, Eloi
dc.contributor.authorPuigdollers i González, Joaquim
dc.contributor.authorOrtega Villasclaras, Pablo Rafael
dc.contributor.authorVoz Sánchez, Cristóbal
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.identifier.citationRos, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. "IEEE Journal of the Electron Devices Society", 9 Gener 2020.
dc.description© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.description.abstractIn this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm 2 /V·s) and on/off ratios above 10 5 , the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshThin films
dc.subject.otherOrganic semiconductors
dc.subject.otherDensity of states
dc.titleOrigin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor
dc.subject.lemacCapes fines
dc.contributor.groupUniversitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies
dc.description.peerreviewedPeer Reviewed
dc.rights.accessOpen Access
dc.description.versionPostprint (author's final draft)
local.citation.authorRos, E.; Puigdollers, J.; Ortega, P.; Voz, C.
local.citation.publicationNameIEEE Journal of the Electron Devices Society

Files in this item


This item appears in the following Collection(s)

Show simple item record

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder