Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor

In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm 2 /V·s) and on/off ratios above 10 5 , the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.

Description

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

CitationRos, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. "IEEE Journal of the Electron Devices Society", 9 Gener 2020.

URIhttp://hdl.handle.net/2117/175469

DOI10.1109/JEDS.2020.2965213

ISSN2168-6734

Publisher versionhttps://ieeexplore.ieee.org/document/8714731

Collections

View Usage Statistics

Show full item record

Files	Description	Size	Format	View
Origin of the N ... teristics of a picene.docx		451,3Kb	Microsoft Word 2007	View/Open

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder

UPCommons. Global access to UPC knowledge

Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor

View/Open

Browse