Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor
Cita com:
hdl:2117/175469
Tipus de documentArticle
Data publicació2020-01-09
EditorInstitute of Electrical and Electronics Engineers (IEEE)
Condicions d'accésAccés obert
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Abstract
In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm 2 /V·s) and on/off ratios above 10 5 , the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.
Descripció
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CitacióRos, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. "IEEE Journal of the Electron Devices Society", 9 Gener 2020.
ISSN2168-6734
Versió de l'editorhttps://ieeexplore.ieee.org/document/8714731
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Origin of the N ... teristics of a picene.docx | 451,3Kb | Microsoft Word 2007 | Visualitza/Obre |