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Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters

dc.contributor.authorLumbreras Carrasco, David
dc.contributor.authorZaragoza Bertomeu, Jordi
dc.contributor.authorMon González, Juan
dc.contributor.authorGálvez, Eduardo
dc.contributor.authorCollado Escolano, Alfonso
dc.contributor.otherUniversitat Politècnica de Catalunya. Doctorat en Enginyeria Electrònica
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2020-01-15T17:46:18Z
dc.date.available2020-01-15T17:46:18Z
dc.date.issued2019
dc.identifier.citationLumbreras, D. [et al.]. Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters. A: Annual Conference of the IEEE Industrial Electronics Society. "IECON 2019: 45th Annual Conferenceof the IEEE Industrial Electronics Society: Convention Center, Lisbon, Portugal: 14-17 October, 2019". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 5126-5133.
dc.identifier.isbn978-1-7281-4878-6
dc.identifier.urihttp://hdl.handle.net/2117/174949
dc.description© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.description.abstractPower devices based on wide band-gap materials are emerging as alternatives to silicon-based devices. These new devices allow designing and building converters with fewer power losses, and are thus more highly efficient than traditional power converters. Among the wide band-gap materials in use, silicon carbide (SiC) and gallium nitride (GaN) devices are the most promising because of their excellent properties and commercial availability. This paper compares the losses produced in two-level and three-level power converters that use the aforementioned technologies. In addition, we assess the impact on the converter performance caused by the modulation technique. Simulation results under various operating points are reported and compared.
dc.format.extent8 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors
dc.subject.lcshWide gap semiconductors
dc.subject.otherGallium Nitride (GaN)
dc.subject.otherLosses
dc.subject.otherModulation techniques
dc.subject.otherNeutral-Point Clamped Converter (NPC)
dc.subject.otherPLECS
dc.subject.otherSilicon
dc.subject.otherSilicon Carbide (SiC)
dc.subject.otherWide band-gap semiconductors
dc.titleEfficiency analysis of wide band-gap semiconductors for two-level and three-level power converters
dc.typeConference lecture
dc.subject.lemacSemiconductors de gap ampl
dc.contributor.groupUniversitat Politècnica de Catalunya. (TIEG) - Terrassa Industrial Electronics Group
dc.identifier.doi10.1109/IECON.2019.8926766
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://ieeexplore.ieee.org/abstract/document/8926766
dc.rights.accessOpen Access
local.identifier.drac26416642
dc.description.versionPostprint (author's final draft)
local.citation.authorLumbreras, D.; Zaragoza, J.; Mon, J.; Gálvez, E.; Collado, A.
local.citation.contributorAnnual Conference of the IEEE Industrial Electronics Society
local.citation.publicationNameIECON 2019: 45th Annual Conferenceof the IEEE Industrial Electronics Society: Convention Center, Lisbon, Portugal: 14-17 October, 2019
local.citation.startingPage5126
local.citation.endingPage5133


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