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dc.contributor.authorBergmann, Michael J.
dc.contributor.authorTeistworth, Stephen W.
dc.contributor.authorBonilla, Luis L.
dc.contributor.authorRodríguez Cantalapiedra, Inma
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament de Física Aplicada
dc.identifier.citationBergmann, M.J.; Teitsworth, S.W.; Bonilla, L.L.; Cantalapiedra, I.R. "Solitary-wave conduction in p-type Ge under time dependent voltage bias". Physical Review B, 1996, vol. 53, núm. 3, p. 1327-1335. ISSN:0163-1829
dc.description.abstractWe present the results of numerical simulations of a drift-diffusion model—including electric-field-dependent generation-recombination processes—for closely compensated p-type Ge at low temperature and under dc+ac and dc+noise voltage biases, with an Ohmic boundary condition. We observe frequency locking and quasiperiodicity under dc+ac bias, but do not find chaotic behavior for a uniform impurity profile. Noise-induced intermittent switching near the onset of solitary-wave conduction is compared to experimentally observed intermittency, type-III intermittency, and on-off intermittency. For a linearly increasing acceptor concentration, we find that the size of the solitary waves diminishes as they advance across the sample
dc.publisherAmerican Physical Society
dc.subjectÀrees temàtiques de la UPC::Matemàtiques i estadística::Equacions diferencials i integrals
dc.subject.otherSolitary wave
dc.subject.otherNumerical simulationa
dc.titleSolitary-wave conduction in p-type Ge under time dependent voltage bias
dc.subject.lemacDinàmica molecular
dc.contributor.groupUniversitat Politècnica de Catalunya. NOLIN - Física No-Lineal i Sistemes Fora de l'Equilibri
dc.description.peerreviewedPeer Reviewed
dc.rights.accessRestricted access - publisher's policy
dc.description.versionPostprint (published version)

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