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dc.contributor.authorNtinas, Vasileios
dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.authorSirakoulis, Georgios Ch.
dc.contributor.authorCotofana, Sorin
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2019-09-26T13:49:11Z
dc.date.available2019-09-26T13:49:11Z
dc.date.issued2019
dc.identifier.citationNtinas, V. [et al.]. A pragmatic gaze on stochastic resonance based variability tolerant memristance. A: IEEE International Symposium on Circuits and Systems. "2019 IEEE International Symposium on Circuits and Systems (ISCAS): proceedings: 26-29 May 2019: Sapporo, Japan". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 52-56.
dc.identifier.isbn978-1-7281-0398-3
dc.identifier.urihttp://hdl.handle.net/2117/168772
dc.description© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
dc.description.abstractStochastic Resonance (SR) is a nonlinear system specific phenomenon, which was demonstrated to lead to system unexpected (counter-intuitive) performance improvements under certain noise conditions. Memristor, on the other hand, is a fundamentally nonlinear circuit element, thus susceptible to benefit from SR, which recently came in the spotlight of the emerging technologies potential candidates. However, at this time, the variability exhibited by manufactured memristor devices within the same array constitutes the main hurdle in the road towards the commercialisation of memristor-based memories and/or computing units. Thus, in this paper, memristor SR effects are explored, assuming various memristor models, and SR-based memristance range enhancement, tolerant to device-to-device variability, is demonstrated. Our experiments reveal that SR can induce significant R MAX /R MIN ratio increase under up to 60% variability, getting as high as 3.4× for 29 dBm noise power.
dc.format.extent5 p.
dc.language.isoeng
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica::Circuits integrats
dc.subject.lcshIntegrated circuits
dc.subject.otherMemristors
dc.subject.otherWhite noise
dc.subject.otherResistance
dc.subject.otherStochastic resonance
dc.subject.otherNonlinear systems
dc.subject.otherTime-frequency analysis
dc.subject.otherIntegrated circuit modeling
dc.titleA pragmatic gaze on stochastic resonance based variability tolerant memristance
dc.typeConference report
dc.subject.lemacCircuits integrats
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.identifier.doi10.1109/ISCAS.2019.8702792
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttps://ieeexplore.ieee.org/document/8702792
dc.rights.accessOpen Access
drac.iddocument25825622
dc.description.versionPostprint (author's final draft)
dc.relation.projectidinfo:eu-repo/grantAgreement/MINECO/1PE/TEC2016-75151-C3-2-R
upcommons.citation.authorNtinas, V.; Rubio, A.; Sirakoulis, G.; Cotofana, S.
upcommons.citation.contributorIEEE International Symposium on Circuits and Systems
upcommons.citation.publishedtrue
upcommons.citation.publicationName2019 IEEE International Symposium on Circuits and Systems (ISCAS): proceedings: 26-29 May 2019: Sapporo, Japan
upcommons.citation.startingPage52
upcommons.citation.endingPage56


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