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Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor
| dc.contributor.author | Ros, Eloi |
| dc.contributor.author | Puigdollers i González, Joaquim |
| dc.contributor.author | Ortega Villasclaras, Pablo Rafael |
| dc.contributor.author | Voz Sánchez, Cristóbal |
| dc.contributor.other | Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica |
| dc.date.accessioned | 2019-07-30T07:34:58Z |
| dc.date.available | 2019-07-30T07:34:58Z |
| dc.date.issued | 2019 |
| dc.identifier.citation | Ros, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. A: Latin American Electron Devices Conference. "2019 Latin American Electron Devices Conference (LAEDC 2019): Armenia, Colombia: 24-27 February 2019". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 1-4. |
| dc.identifier.isbn | 9781728122175 |
| dc.identifier.uri | http://hdl.handle.net/2117/167067 |
| dc.description | © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
| dc.description.abstract | In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm2/V¿s) and on/off ratios above 105, the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed. |
| dc.format.extent | 4 p. |
| dc.language.iso | eng |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) |
| dc.subject | Àrees temàtiques de la UPC::Física::Física de l'estat sòlid::Semiconductors |
| dc.subject.lcsh | Organic semiconductors |
| dc.subject.other | OTFT |
| dc.subject.other | NDR |
| dc.subject.other | Organic semiconductors |
| dc.subject.other | Non ideal output |
| dc.title | Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor |
| dc.type | Conference report |
| dc.subject.lemac | Semiconductors orgànics |
| dc.contributor.group | Universitat Politècnica de Catalunya. MNT - Grup de Recerca en Micro i Nanotecnologies |
| dc.identifier.doi | 10.1109/LAED.2019.8714731 |
| dc.description.peerreviewed | Peer Reviewed |
| dc.relation.publisherversion | https://ieeexplore.ieee.org/document/8714731 |
| dc.rights.access | Open Access |
| local.identifier.drac | 23964743 |
| dc.description.version | Postprint (author's final draft) |
| dc.relation.projectid | info:eu-repo/grantAgreement/MINECO/1PE/ENE2016-78933-C4-1-R |
| dc.relation.projectid | info:eu-repo/grantAgreement/AEI/Plan Estatal de Investigación Científica y Técnica y de Innovación 2013-2016/ENE2017-87671-C3-2-R/ES/DISPOSITIVOS HIBRIDOS DE SILICIO%2FCALCOGENURO DE CAPA DELGADA PARA TECNOLOGIAS FOTOVOLTAICOS SOSTENIBLES DE BAJO COSTE Y MUY ALTA EFICIENCIA/ |
| local.citation.author | Ros, E.; Puigdollers, J.; Ortega, P.; Voz, C. |
| local.citation.contributor | Latin American Electron Devices Conference |
| local.citation.publicationName | 2019 Latin American Electron Devices Conference (LAEDC 2019): Armenia, Colombia: 24-27 February 2019 |
| local.citation.startingPage | 1 |
| local.citation.endingPage | 4 |
