Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor
Document typeConference report
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Rights accessOpen Access
In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm2/V¿s) and on/off ratios above 105, the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a possible explanation for this phenomenon is developed.
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CitationRos, E. [et al.]. Origin of the negative differential resistance in the output characteristics of a picene-based thin-film transistor. A: Latin American Electron Devices Conference. "2019 Latin American Electron Devices Conference (LAEDC 2019): Armenia, Colombia: 24-27 February 2019". Institute of Electrical and Electronics Engineers (IEEE), 2019, p. 1-4.
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