On line monitoring of RF power amplifiers with embedded temperature sensors

Altet Sanahujes, Josep; Mateo Peña, Diego; Gómez Salinas, Dídac

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Altet Sanahujes, Josep

Mateo Peña, Diego

Gómez Salinas, Dídac

Document typeConference report

Defense date2012

PublisherIEEE

Rights accessRestricted access - publisher's policy

All rights reserved. This work is protected by the corresponding intellectual and industrial property rights. Without prejudice to any existing legal exemptions, reproduction, distribution, public communication or transformation of this work are prohibited without permission of the copyright holder

Abstract

In the present paper we analyze that DC temperature measurements of the silicon surface can be used to monitor the high frequency status and performances of class A RF Power Amplifiers. As a proof of concept, we present experimental results obtained with a 65 nm CMOS IC that contains a 2GHz linear class A Power Amplifier and a very simple differential temperature sensor. Results show that the PA output power can be tracked from DC temperature measurements.

CitationAltet, J.; Mateo, D.; Gómez, D. On line monitoring of RF power amplifiers with embedded temperature sensors. A: IEEE International On-Line Testing Symposium. "2012 IEEE 18th International On-Line Testing Symposium (IOLTS), Sitges, Spain, June 27-29, 2012". Sitges, Barcelona: IEEE, 2012, p. 1-5.

URIhttp://hdl.handle.net/2117/16657

ISBN978-1-4673-2084-9

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