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dc.contributor.authorRubio Sola, Jose Antonio
dc.contributor.authorAmat Bertran, Esteve
dc.contributor.authorPouyan, Peyman
dc.contributor.otherUniversitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica
dc.date.accessioned2012-09-26T10:59:55Z
dc.date.created2012
dc.date.issued2012
dc.identifier.citationRubio, J.A.; Amat, E.; Pouyan, P. Process variability-aware proactive reconfiguration techniques for mitigating aging effects in nano scale SRAM lifetime. A: VLSI Test Symposium. "Proceedings of the VLSI Test Symposium". Hawaii: IEEE Press. Institute of Electrical and Electronics Engineers, 2012, p. 240-245.
dc.identifier.urihttp://hdl.handle.net/2117/16582
dc.description.abstractProcess variations and device aging have a significant impact on the reliability and performance of nano scale integrated circuits. Proactive reconfiguration is an emerging technique to extend the lifetime of embedded SRAM memories. This work introduces a novel version that modifies and enhances the advantages of this method by considering the process variability impact on the memory components. Our results show between 30% and 45% SRAM lifetime increases over the existing proactive reconfiguration technique and between 1.7X and ~10X improvement over the non-proactive reconfiguration.
dc.format.extent6 p.
dc.language.isoeng
dc.publisherIEEE Press. Institute of Electrical and Electronics Engineers
dc.subjectÀrees temàtiques de la UPC::Enginyeria electrònica::Circuits electrònics
dc.subject.lcshElectronic circuit design -- Fiabilitat
dc.titleProcess variability-aware proactive reconfiguration techniques for mitigating aging effects in nano scale SRAM lifetime
dc.typeConference lecture
dc.subject.lemacCircuits electrònics -- Reliability
dc.contributor.groupUniversitat Politècnica de Catalunya. HIPICS - Grup de Circuits i Sistemes Integrats d'Altes Prestacions
dc.description.peerreviewedPeer Reviewed
dc.relation.publisherversionhttp://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6231060
dc.rights.accessRestricted access - publisher's policy
drac.iddocument10680614
dc.description.versionPostprint (published version)
dc.date.lift10000-01-01
upcommons.citation.authorRubio, J.A.; Amat, E.; Pouyan, P.
upcommons.citation.contributorVLSI Test Symposium
upcommons.citation.pubplaceHawaii
upcommons.citation.publishedtrue
upcommons.citation.publicationNameProceedings of the VLSI Test Symposium
upcommons.citation.startingPage240
upcommons.citation.endingPage245


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